Influence of uniaxial anisotropy on the domain pinning fields of ferromagnetic Ga1-x Mnx As films

Sangyeop Lee; Hakjoon Lee; Taehee Yoo; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1063/1.3486210

Influence of uniaxial anisotropy on the domain pinning fields of ferromagnetic Ga_1-x Mn_x As films

Sangyeop Lee, Hakjoon Lee, Taehee Yoo, Sanghoon Lee, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The domain pinning fields of ferromagnetic Ga_1-x Mn _xAs films were investigated using the planar Hall effect (PHE). Two in-plane components of GaMnAs films' anisotropy fields (H4 and HU), which determine the direction of magnetic easy axes in the (001) plane, were obtained from the PHE's angular dependence fitted with magnetic free energy within the scheme of the Stoner-Wohlfarth model. The domain pinning fields were obtained both with and without consideration of the deviation angle, δ, of magnetic easy axes from the 〈 100 〉 crystallographic direction of each sample. The values of domain pinning fields are clearly different between the two methods of analysis and the discrepancy increases with δ. This indicates that the correct direction of the magnetic easy axis (i.e., the influence of uniaxial anisotropy) must be considered to obtain precise values of pinning fields in GaMnAs films.

Original language	English
Article number	063910
Journal	Journal of Applied Physics
Volume	108
Issue number	6
DOIs	https://doi.org/10.1063/1.3486210
Publication status	Published - 2010 Sept 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3486210

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title = "Influence of uniaxial anisotropy on the domain pinning fields of ferromagnetic Ga1-x Mnx As films",

abstract = "The domain pinning fields of ferromagnetic Ga1-x Mn xAs films were investigated using the planar Hall effect (PHE). Two in-plane components of GaMnAs films' anisotropy fields (H4 and HU), which determine the direction of magnetic easy axes in the (001) plane, were obtained from the PHE's angular dependence fitted with magnetic free energy within the scheme of the Stoner-Wohlfarth model. The domain pinning fields were obtained both with and without consideration of the deviation angle, δ, of magnetic easy axes from the 〈 100 〉 crystallographic direction of each sample. The values of domain pinning fields are clearly different between the two methods of analysis and the discrepancy increases with δ. This indicates that the correct direction of the magnetic easy axis (i.e., the influence of uniaxial anisotropy) must be considered to obtain precise values of pinning fields in GaMnAs films.",

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AU - Lee, Sangyeop

AU - Lee, Hakjoon

AU - Yoo, Taehee

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2010/9/15

Y1 - 2010/9/15

N2 - The domain pinning fields of ferromagnetic Ga1-x Mn xAs films were investigated using the planar Hall effect (PHE). Two in-plane components of GaMnAs films' anisotropy fields (H4 and HU), which determine the direction of magnetic easy axes in the (001) plane, were obtained from the PHE's angular dependence fitted with magnetic free energy within the scheme of the Stoner-Wohlfarth model. The domain pinning fields were obtained both with and without consideration of the deviation angle, δ, of magnetic easy axes from the 〈 100 〉 crystallographic direction of each sample. The values of domain pinning fields are clearly different between the two methods of analysis and the discrepancy increases with δ. This indicates that the correct direction of the magnetic easy axis (i.e., the influence of uniaxial anisotropy) must be considered to obtain precise values of pinning fields in GaMnAs films.

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Influence of uniaxial anisotropy on the domain pinning fields of ferromagnetic Ga_1-x Mn_x As films

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