Abstract
The influences of ambient gases on the packaging of Spindt-type Mo-field emitter arrays (FEAs) at the atmosphere were studied through electrical field emission characteristics and Mo surface analysis according to various ambient gases (N2, AR and air). And electrical field emission characteristics in ultra high vacuum chamber and Mo surface analysis were performed after breaking the sealing lines to expose the FEAs. We can obtain increased electron emission current for each pixel by using Ar gas when compared with other gases during frit process.
| Original language | English |
|---|---|
| Pages | 67-68 |
| Number of pages | 2 |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: 1998 Jul 19 → 1998 Jul 24 |
Other
| Other | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC |
|---|---|
| City | Asheville, NC, USA |
| Period | 98/7/19 → 98/7/24 |
ASJC Scopus subject areas
- Surfaces and Interfaces