Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

Seung Geun Kim; Seung Hwan Kim; June Park; Gwang Sik Kim; Jae Hyeun Park; Krishna C. Saraswat; Jiyoung Kim; Hyun Yong Yu

doi:10.1021/acsnano.9b03683

Infrared Detectable MoS₂ Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

Seung Geun Kim, Seung Hwan Kim, June Park, Gwang Sik Kim, Jae Hyeun Park, Krishna C. Saraswat, Jiyoung Kim, Hyun Yong Yu

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

83 Citations (Scopus)

Abstract

Layered two-dimensional (2D) materials have entered the spotlight as promising channel materials for future optoelectronic devices owing to their excellent electrical and optoelectronic properties. However, their limited photodetection range caused by their wide bandgap remains a principal challenge in 2D layered materials-based phototransistors. Here, we developed a germanium (Ge)-gated MoS₂ phototransistor that can detect light in the region from visible to infrared (λ = 520-1550 nm) using a detection mechanism based on band bending modulation. In addition, the Ge-gated MoS₂ phototransistor is proposed as a multilevel optic-neural synaptic device, which performs both optical-sensing and synaptic functions on one device and is operated in different current ranges according to the light conditions: dark, visible, and infrared. This study is expected to contribute to the development of 2D material-based phototransistors and synaptic devices in next-generation optoelectronics.

Original language	English
Pages (from-to)	10294-10300
Number of pages	7
Journal	ACS nano
Volume	13
Issue number	9
DOIs	https://doi.org/10.1021/acsnano.9b03683
Publication status	Published - 2019 Sept 24

Bibliographical note

Funding Information:
This research was supported by the Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning under Grant 2016M3A7B4910426 and was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the NRF of Korea under Grant 2017R1A2B4006460.

Publisher Copyright:
© 2019 American Chemical Society.

Keywords

MoS phototransistor
germanium gate
optic-neural synapse
two-dimensional materials
wide detection range

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1021/acsnano.9b03683

Cite this

@article{78189d713ebf4fcc8bacb976fd4b5616,

title = "Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse",

abstract = "Layered two-dimensional (2D) materials have entered the spotlight as promising channel materials for future optoelectronic devices owing to their excellent electrical and optoelectronic properties. However, their limited photodetection range caused by their wide bandgap remains a principal challenge in 2D layered materials-based phototransistors. Here, we developed a germanium (Ge)-gated MoS2 phototransistor that can detect light in the region from visible to infrared (λ = 520-1550 nm) using a detection mechanism based on band bending modulation. In addition, the Ge-gated MoS2 phototransistor is proposed as a multilevel optic-neural synaptic device, which performs both optical-sensing and synaptic functions on one device and is operated in different current ranges according to the light conditions: dark, visible, and infrared. This study is expected to contribute to the development of 2D material-based phototransistors and synaptic devices in next-generation optoelectronics.",

keywords = "MoS phototransistor, germanium gate, optic-neural synapse, two-dimensional materials, wide detection range",

author = "Kim, {Seung Geun} and Kim, {Seung Hwan} and June Park and Kim, {Gwang Sik} and Park, {Jae Hyeun} and Saraswat, {Krishna C.} and Jiyoung Kim and Yu, {Hyun Yong}",

note = "Funding Information: This research was supported by the Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning under Grant 2016M3A7B4910426 and was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the NRF of Korea under Grant 2017R1A2B4006460. Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = sep,

day = "24",

doi = "10.1021/acsnano.9b03683",

language = "English",

volume = "13",

pages = "10294--10300",

journal = "ACS nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "9",

}

TY - JOUR

T1 - Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

AU - Kim, Seung Geun

AU - Kim, Seung Hwan

AU - Park, June

AU - Kim, Gwang Sik

AU - Park, Jae Hyeun

AU - Saraswat, Krishna C.

AU - Kim, Jiyoung

AU - Yu, Hyun Yong

N1 - Funding Information: This research was supported by the Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning under Grant 2016M3A7B4910426 and was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the NRF of Korea under Grant 2017R1A2B4006460. Publisher Copyright: © 2019 American Chemical Society.

PY - 2019/9/24

Y1 - 2019/9/24

N2 - Layered two-dimensional (2D) materials have entered the spotlight as promising channel materials for future optoelectronic devices owing to their excellent electrical and optoelectronic properties. However, their limited photodetection range caused by their wide bandgap remains a principal challenge in 2D layered materials-based phototransistors. Here, we developed a germanium (Ge)-gated MoS2 phototransistor that can detect light in the region from visible to infrared (λ = 520-1550 nm) using a detection mechanism based on band bending modulation. In addition, the Ge-gated MoS2 phototransistor is proposed as a multilevel optic-neural synaptic device, which performs both optical-sensing and synaptic functions on one device and is operated in different current ranges according to the light conditions: dark, visible, and infrared. This study is expected to contribute to the development of 2D material-based phototransistors and synaptic devices in next-generation optoelectronics.

AB - Layered two-dimensional (2D) materials have entered the spotlight as promising channel materials for future optoelectronic devices owing to their excellent electrical and optoelectronic properties. However, their limited photodetection range caused by their wide bandgap remains a principal challenge in 2D layered materials-based phototransistors. Here, we developed a germanium (Ge)-gated MoS2 phototransistor that can detect light in the region from visible to infrared (λ = 520-1550 nm) using a detection mechanism based on band bending modulation. In addition, the Ge-gated MoS2 phototransistor is proposed as a multilevel optic-neural synaptic device, which performs both optical-sensing and synaptic functions on one device and is operated in different current ranges according to the light conditions: dark, visible, and infrared. This study is expected to contribute to the development of 2D material-based phototransistors and synaptic devices in next-generation optoelectronics.

KW - MoS phototransistor

KW - germanium gate

KW - optic-neural synapse

KW - two-dimensional materials

KW - wide detection range

UR - http://www.scopus.com/inward/record.url?scp=85072690998&partnerID=8YFLogxK

U2 - 10.1021/acsnano.9b03683

DO - 10.1021/acsnano.9b03683

M3 - Article

C2 - 31469532

AN - SCOPUS:85072690998

SN - 1936-0851

VL - 13

SP - 10294

EP - 10300

JO - ACS nano

JF - ACS nano

IS - 9

ER -