Layered two-dimensional (2D) materials have entered the spotlight as promising channel materials for future optoelectronic devices owing to their excellent electrical and optoelectronic properties. However, their limited photodetection range caused by their wide bandgap remains a principal challenge in 2D layered materials-based phototransistors. Here, we developed a germanium (Ge)-gated MoS2 phototransistor that can detect light in the region from visible to infrared (λ = 520-1550 nm) using a detection mechanism based on band bending modulation. In addition, the Ge-gated MoS2 phototransistor is proposed as a multilevel optic-neural synaptic device, which performs both optical-sensing and synaptic functions on one device and is operated in different current ranges according to the light conditions: dark, visible, and infrared. This study is expected to contribute to the development of 2D material-based phototransistors and synaptic devices in next-generation optoelectronics.
Bibliographical noteFunding Information:
This research was supported by the Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning under Grant 2016M3A7B4910426 and was supported in part by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the NRF of Korea under Grant 2017R1A2B4006460.
© 2019 American Chemical Society.
- MoS phototransistor
- germanium gate
- optic-neural synapse
- two-dimensional materials
- wide detection range
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)