InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate

Keyphrases

• Indium Gallium Nitride (InGaN) 100%
• Light-emitting Diodes 100%
• Patterned Sapphire Substrate 100%
• Micro-nano 100%
• Injection Current 41%
• Nanopatterning 25%
• High Injection 25%
• Temperature Rise 16%
• Electroluminescence 16%
• Peak Wavelength 16%
• Sapphire 8%
• Active Layer 8%
• Room Temperature 8%
• Light Output 8%
• Raman Spectra 8%
• Anodic Aluminum Oxide 8%
• GaN Buffer 8%
• Strain Relaxation 8%
• Viewing Angle 8%
• Contact Area 8%
• Piezoelectric Field 8%
• Band Gap Reduction 8%
• Etching Mask 8%
• High-power Diode 8%
• Diffuse Reflection 8%
• Escape Probability 8%
• Reverse Leakage Current 8%
• Threading Dislocation 8%
• Microscale Pattern 8%
• Accumulated Heat 8%
• Strain-free 8%
• Chip Temperature 8%
• Oxide Etching 8%
• Efficiency Droop 8%
• Structural Layers 8%
• Shrinkage Effect 8%
• X-ray Diffraction Intensity 8%
• Quantum-confined Stark Effect 8%
• Reflection Rate 8%
• Reciprocal Space Mapping 8%

Engineering

• Light-Emitting Diode 100%
• Sapphire Substrate 100%
• Nanoscale 100%
• Current Injection 38%
• Temperature Rise 15%
• Luminaires 15%
• Active Layer 7%
• Ray Diffraction 7%
• Room Temperature 7%
• Piezoelectric 7%
• Aluminum Oxide 7%
• Light Output Power 7%
• Buffer Layer 7%
• Microscale 7%
• Strain Relaxation 7%
• Contact Area 7%
• Threading Dislocation 7%
• Free Strain 7%
• Efficiency Droop 7%
• Diffuse Reflection 7%
• Reciprocal Space 7%
• Band Gap 7%
• Raman Spectra 7%

Material Science

• Sapphire 100%
• Light-Emitting Diode 100%
• Electroluminescence 15%
• X-Ray Diffraction 7%
• Piezoelectricity 7%
• Aluminum Oxide 7%
• Buffer Layer 7%
• Contact Area 7%