InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Sukwon Kim, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga2O3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10- 3 Ω-cm2 with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.

Original languageEnglish
Pages (from-to)39-42
Number of pages4
JournalThin Solid Films
Publication statusPublished - 2015 Sept 30


  • Hydrogen annealing
  • Indium gallium tin oxide
  • Transparent conductive electrode
  • Ultraviolet light-emitting diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes'. Together they form a unique fingerprint.

Cite this