InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Sukwon Kim, Tae Geun Kim

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga2O3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10- 3 Ω-cm2 with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.

    Original languageEnglish
    Pages (from-to)39-42
    Number of pages4
    JournalThin Solid Films
    Volume591
    DOIs
    Publication statusPublished - 2015 Sept 30

    Bibliographical note

    Publisher Copyright:
    © 2015 Elsevier B.V. All rights reserved.

    Keywords

    • Hydrogen annealing
    • Indium gallium tin oxide
    • Transparent conductive electrode
    • Ultraviolet light-emitting diode

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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