Abstract
In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga2O3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10- 3 Ω-cm2 with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.
Original language | English |
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Pages (from-to) | 39-42 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 591 |
DOIs | |
Publication status | Published - 2015 Sept 30 |
Keywords
- Hydrogen annealing
- Indium gallium tin oxide
- Transparent conductive electrode
- Ultraviolet light-emitting diode
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry