InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Sukwon Kim; Tae Geun Kim

doi:10.1016/j.tsf.2015.08.023

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Sukwon Kim, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga₂O₃ targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10^{- 3} Ω-cm² with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.

Original language	English
Pages (from-to)	39-42
Number of pages	4
Journal	Thin Solid Films
Volume	591
DOIs	https://doi.org/10.1016/j.tsf.2015.08.023
Publication status	Published - 2015 Sept 30

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

Hydrogen annealing
Indium gallium tin oxide
Transparent conductive electrode
Ultraviolet light-emitting diode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2015.08.023

Cite this

@article{bdafafa27c814272b207be45eb8e68b6,

title = "InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes",

abstract = "In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga2O3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10- 3 Ω-cm2 with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.",

keywords = "Hydrogen annealing, Indium gallium tin oxide, Transparent conductive electrode, Ultraviolet light-emitting diode",

author = "Sukwon Kim and Kim, {Tae Geun}",

year = "2015",

month = sep,

day = "30",

doi = "10.1016/j.tsf.2015.08.023",

language = "English",

volume = "591",

pages = "39--42",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

AU - Kim, Sukwon

AU - Kim, Tae Geun

PY - 2015/9/30

Y1 - 2015/9/30

N2 - In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga2O3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10- 3 Ω-cm2 with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.

AB - In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga2O3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10- 3 Ω-cm2 with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.

KW - Hydrogen annealing

KW - Indium gallium tin oxide

KW - Transparent conductive electrode

KW - Ultraviolet light-emitting diode

UR - http://www.scopus.com/inward/record.url?scp=84942026364&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2015.08.023

DO - 10.1016/j.tsf.2015.08.023

M3 - Article

AN - SCOPUS:84942026364

SN - 0040-6090

VL - 591

SP - 39

EP - 42

JO - Thin Solid Films

JF - Thin Solid Films

ER -

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this