InGaN/GaN light emitting diodes grown on nanoimprint-based hollow-patterned sapphire substrates

Young Hoon Sung; Jaemin Park; Eun Seo Choi; Tae Hoon Chung; Tae Won Lee; Hee Jun Kim; Jeong Min Baik; Heon Lee

doi:10.1016/j.mee.2019.111082

InGaN/GaN light emitting diodes grown on nanoimprint-based hollow-patterned sapphire substrates

Young Hoon Sung, Jaemin Park, Eun Seo Choi, Tae Hoon Chung, Tae Won Lee, Hee Jun Kim, Jeong Min Baik, Heon Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this study, conical-shaped hollow-patterned sapphire substrates (HPSSs) with three different sizes, were fabricated and used as substrates for blue light emitting diode (LED). The HPSSs were fabricated on 2-inch diameter sapphire wafers by nanoimprint technique. Blue LED structures were grown on the HPSS and flat sapphire wafer, in order to investigate the effect of hollow patterns on sapphire substrate. The photoluminescence (PL), electroluminescence (EL) and X-ray diffraction analysis were used to characterize the blue LED structures. Luminescence efficiency of LED structure, grown on HPSS wafer was improved, compared to identical LED structure grown on conventional flat sapphire wafer. 4.5 times stronger PL and 1.7 times stronger EL intensities were observed from GaN based LED structures grown on HPSS.

Original language	English
Article number	111082
Journal	Microelectronic Engineering
Volume	216
DOIs	https://doi.org/10.1016/j.mee.2019.111082
Publication status	Published - 2019 Aug 15

Bibliographical note

Funding Information:
This work was supported by the Technology Innovation Program ( 20000887 , Development of self healing impact resistant film coating material and process technology for rollable displays) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was supported by the Technology Innovation Program ( N0002310 ) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program ( 10053288 , Development of epitaxial wafer technology for Green LED/LD) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea).

Publisher Copyright:
© 2019

Keywords

Hollow LEDs
Hollow pattern
Light emitting diode
Micro LEDs
Nano imprint

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2019.111082

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@article{ea0c4af307ed44aea2194b105bb5e04d,

title = "InGaN/GaN light emitting diodes grown on nanoimprint-based hollow-patterned sapphire substrates",

abstract = "In this study, conical-shaped hollow-patterned sapphire substrates (HPSSs) with three different sizes, were fabricated and used as substrates for blue light emitting diode (LED). The HPSSs were fabricated on 2-inch diameter sapphire wafers by nanoimprint technique. Blue LED structures were grown on the HPSS and flat sapphire wafer, in order to investigate the effect of hollow patterns on sapphire substrate. The photoluminescence (PL), electroluminescence (EL) and X-ray diffraction analysis were used to characterize the blue LED structures. Luminescence efficiency of LED structure, grown on HPSS wafer was improved, compared to identical LED structure grown on conventional flat sapphire wafer. 4.5 times stronger PL and 1.7 times stronger EL intensities were observed from GaN based LED structures grown on HPSS.",

keywords = "Hollow LEDs, Hollow pattern, Light emitting diode, Micro LEDs, Nano imprint",

author = "Sung, {Young Hoon} and Jaemin Park and Choi, {Eun Seo} and Chung, {Tae Hoon} and Lee, {Tae Won} and Kim, {Hee Jun} and Baik, {Jeong Min} and Heon Lee",

note = "Funding Information: This work was supported by the Technology Innovation Program ( 20000887 , Development of self healing impact resistant film coating material and process technology for rollable displays) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was supported by the Technology Innovation Program ( N0002310 ) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program ( 10053288 , Development of epitaxial wafer technology for Green LED/LD) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = aug,

day = "15",

doi = "10.1016/j.mee.2019.111082",

language = "English",

volume = "216",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - InGaN/GaN light emitting diodes grown on nanoimprint-based hollow-patterned sapphire substrates

AU - Sung, Young Hoon

AU - Park, Jaemin

AU - Choi, Eun Seo

AU - Chung, Tae Hoon

AU - Lee, Tae Won

AU - Kim, Hee Jun

AU - Baik, Jeong Min

AU - Lee, Heon

N1 - Funding Information: This work was supported by the Technology Innovation Program ( 20000887 , Development of self healing impact resistant film coating material and process technology for rollable displays) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was supported by the Technology Innovation Program ( N0002310 ) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program ( 10053288 , Development of epitaxial wafer technology for Green LED/LD) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). Publisher Copyright: © 2019

PY - 2019/8/15

Y1 - 2019/8/15

N2 - In this study, conical-shaped hollow-patterned sapphire substrates (HPSSs) with three different sizes, were fabricated and used as substrates for blue light emitting diode (LED). The HPSSs were fabricated on 2-inch diameter sapphire wafers by nanoimprint technique. Blue LED structures were grown on the HPSS and flat sapphire wafer, in order to investigate the effect of hollow patterns on sapphire substrate. The photoluminescence (PL), electroluminescence (EL) and X-ray diffraction analysis were used to characterize the blue LED structures. Luminescence efficiency of LED structure, grown on HPSS wafer was improved, compared to identical LED structure grown on conventional flat sapphire wafer. 4.5 times stronger PL and 1.7 times stronger EL intensities were observed from GaN based LED structures grown on HPSS.

AB - In this study, conical-shaped hollow-patterned sapphire substrates (HPSSs) with three different sizes, were fabricated and used as substrates for blue light emitting diode (LED). The HPSSs were fabricated on 2-inch diameter sapphire wafers by nanoimprint technique. Blue LED structures were grown on the HPSS and flat sapphire wafer, in order to investigate the effect of hollow patterns on sapphire substrate. The photoluminescence (PL), electroluminescence (EL) and X-ray diffraction analysis were used to characterize the blue LED structures. Luminescence efficiency of LED structure, grown on HPSS wafer was improved, compared to identical LED structure grown on conventional flat sapphire wafer. 4.5 times stronger PL and 1.7 times stronger EL intensities were observed from GaN based LED structures grown on HPSS.

KW - Hollow LEDs

KW - Hollow pattern

KW - Light emitting diode

KW - Micro LEDs

KW - Nano imprint

UR - http://www.scopus.com/inward/record.url?scp=85069519428&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2019.111082

DO - 10.1016/j.mee.2019.111082

M3 - Article

AN - SCOPUS:85069519428

SN - 0167-9317

VL - 216

JO - Microelectronic Engineering

JF - Microelectronic Engineering

M1 - 111082

ER -

InGaN/GaN light emitting diodes grown on nanoimprint-based hollow-patterned sapphire substrates

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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