In this study, conical-shaped hollow-patterned sapphire substrates (HPSSs) with three different sizes, were fabricated and used as substrates for blue light emitting diode (LED). The HPSSs were fabricated on 2-inch diameter sapphire wafers by nanoimprint technique. Blue LED structures were grown on the HPSS and flat sapphire wafer, in order to investigate the effect of hollow patterns on sapphire substrate. The photoluminescence (PL), electroluminescence (EL) and X-ray diffraction analysis were used to characterize the blue LED structures. Luminescence efficiency of LED structure, grown on HPSS wafer was improved, compared to identical LED structure grown on conventional flat sapphire wafer. 4.5 times stronger PL and 1.7 times stronger EL intensities were observed from GaN based LED structures grown on HPSS.
Bibliographical noteFunding Information:
This work was supported by the Technology Innovation Program ( 20000887 , Development of self healing impact resistant film coating material and process technology for rollable displays) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was supported by the Technology Innovation Program ( N0002310 ) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program ( 10053288 , Development of epitaxial wafer technology for Green LED/LD) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea).
- Hollow LEDs
- Hollow pattern
- Light emitting diode
- Micro LEDs
- Nano imprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering