Keyphrases
Indium Gallium Nitride (InGaN)
100%
White Light-emitting Diodes
100%
Silicate
100%
Thin Film Phosphor
100%
Europium
100%
Color Rendering Index
42%
Color Temperature
42%
Light-emitting Diodes
28%
Full Width at Half Maximum
28%
Metal-organic Chemical Vapor Deposition (MOCVD)
14%
Diode Structures
14%
Annealing
14%
Sapphire Substrate
14%
Maximum Intensity
14%
X-ray Rocking Curve
14%
GaN Buffer
14%
Red Emission
14%
Yellow Emission
14%
Low Efficiency
14%
Optical Spectra
14%
RF Sputtering
14%
GaN Template
14%
Yellow Phosphor
14%
Tristimulus
14%
Silicate Compound
14%
Photometric Properties
14%
Material Science
Thin Films
100%
Light-Emitting Diode
100%
Silicate
100%
Europium
100%
Metal-Organic Chemical Vapor Deposition
14%
Sapphire
14%
Buffer Layer
14%
X-Ray Diffractogram
14%
Surface (Surface Science)
14%
Engineering
Thin Films
100%
Light-Emitting Diode
100%
Color Temperature
42%
Metal Organic Chemical Vapor Deposition
14%
Sapphire Substrate
14%
Buffer Layer
14%
Red Emission
14%
Optical Spectrum
14%