Inhomogeneous Barrier Height Characteristics of n-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes

For micro-light-emitting diode (LED)-based display applications, such as virtual reality and augmented reality, high-performance Ohmic contacts (namely, the improvement of current injection efficiency) is vital to the realization of high-efficiency micro-LEDs. The surface Fermi level pinning characteristics could be comprehended in terms of the relation between work function of metals (M) and Schottky barrier height (SBH, B). In this study, we have investigated the surface Fermi level pinning characteristics of (001) n-AlInP surfaces by employing Schottky diodes with different metals. With an increase in the temperature, B increases linearly and ideality factors (n) decreases. This behavior is related to the barrier height inhomogeneity. Inhomogeneity-modelbased B is evaluated to be in the range of 0.86 1.30 eV, which is dependent on the metal work functions and are similar to those measured from capacitance-voltage relation. Further, The S-parameter, the relation between B and M (d B/d M), is 0.36. This is indicative of the partial pinning of the surface Fermi level at the surface states placed at 0.95 eV below the conduction band. Furthermore, it is also shown that (NH4)2S-passivation results in an increases the mean SBH and the S-parameter (e.g., 0.52).