Initial stages of Fe growth on clean and Sb-terminated Si(1 0 0) surfaces

Kang Ho Park; Jeong Sook Ha; Wan Soo Yun

doi:10.1016/S0039-6028(01)01382-6

Initial stages of Fe growth on clean and Sb-terminated Si(1 0 0) surfaces

Kang Ho Park, Jeong Sook Ha, Wan Soo Yun

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The initial stages of Fe growth on clean and Sb-terminated Si(1 0 0) surfaces were investigated with a scanning tunnelling microscopy/spectroscopy. Due to the saturation of Si dangling bonds by Sb adatoms, nucleation sites for Fe growth are highly reduced on Sb-terminated Si(1 0 0) surfaces. We find that the sizes of islands grown on Sb-terminated surfaces are larger but the island densities are smaller than those grown on clean surfaces. Through the local I-V measurements on Fe islands, it was found that the conduction properties gradually changed from semiconducting to metallic as Fe coverage increased. It was explained in terms of the coalescence of Fe clusters and the formation of bulk metallic Fe films.

Original language	English
Pages (from-to)	34-40
Number of pages	7
Journal	Surface Science
Volume	492
Issue number	1-2
DOIs	https://doi.org/10.1016/S0039-6028(01)01382-6
Publication status	Published - 2001 Oct 10
Externally published	Yes

Keywords

Antimony
Iron
Scanning tunnelling microscopy
Scanning tunnelling spectroscopies
Silicon
Surface structure, morphology, roughness, and topography

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/S0039-6028(01)01382-6

Cite this

@article{7dad3dbd616e414485df3bf00051540b,

title = "Initial stages of Fe growth on clean and Sb-terminated Si(1 0 0) surfaces",

abstract = "The initial stages of Fe growth on clean and Sb-terminated Si(1 0 0) surfaces were investigated with a scanning tunnelling microscopy/spectroscopy. Due to the saturation of Si dangling bonds by Sb adatoms, nucleation sites for Fe growth are highly reduced on Sb-terminated Si(1 0 0) surfaces. We find that the sizes of islands grown on Sb-terminated surfaces are larger but the island densities are smaller than those grown on clean surfaces. Through the local I-V measurements on Fe islands, it was found that the conduction properties gradually changed from semiconducting to metallic as Fe coverage increased. It was explained in terms of the coalescence of Fe clusters and the formation of bulk metallic Fe films.",

keywords = "Antimony, Iron, Scanning tunnelling microscopy, Scanning tunnelling spectroscopies, Silicon, Surface structure, morphology, roughness, and topography",

author = "Park, {Kang Ho} and {Sook Ha}, Jeong and {Soo Yun}, Wan",

note = "Funding Information: This work has been supported by the Ministry of Informations and Communications and Ministry of Commerce, Industry and Energy, Korea.",

year = "2001",

month = oct,

day = "10",

doi = "10.1016/S0039-6028(01)01382-6",

language = "English",

volume = "492",

pages = "34--40",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Initial stages of Fe growth on clean and Sb-terminated Si(1 0 0) surfaces

AU - Park, Kang Ho

AU - Sook Ha, Jeong

AU - Soo Yun, Wan

N1 - Funding Information: This work has been supported by the Ministry of Informations and Communications and Ministry of Commerce, Industry and Energy, Korea.

PY - 2001/10/10

Y1 - 2001/10/10

N2 - The initial stages of Fe growth on clean and Sb-terminated Si(1 0 0) surfaces were investigated with a scanning tunnelling microscopy/spectroscopy. Due to the saturation of Si dangling bonds by Sb adatoms, nucleation sites for Fe growth are highly reduced on Sb-terminated Si(1 0 0) surfaces. We find that the sizes of islands grown on Sb-terminated surfaces are larger but the island densities are smaller than those grown on clean surfaces. Through the local I-V measurements on Fe islands, it was found that the conduction properties gradually changed from semiconducting to metallic as Fe coverage increased. It was explained in terms of the coalescence of Fe clusters and the formation of bulk metallic Fe films.

AB - The initial stages of Fe growth on clean and Sb-terminated Si(1 0 0) surfaces were investigated with a scanning tunnelling microscopy/spectroscopy. Due to the saturation of Si dangling bonds by Sb adatoms, nucleation sites for Fe growth are highly reduced on Sb-terminated Si(1 0 0) surfaces. We find that the sizes of islands grown on Sb-terminated surfaces are larger but the island densities are smaller than those grown on clean surfaces. Through the local I-V measurements on Fe islands, it was found that the conduction properties gradually changed from semiconducting to metallic as Fe coverage increased. It was explained in terms of the coalescence of Fe clusters and the formation of bulk metallic Fe films.

KW - Antimony

KW - Iron

KW - Scanning tunnelling microscopy

KW - Scanning tunnelling spectroscopies

KW - Silicon

KW - Surface structure, morphology, roughness, and topography

UR - http://www.scopus.com/inward/record.url?scp=0035840970&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035840970&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(01)01382-6

DO - 10.1016/S0039-6028(01)01382-6

M3 - Article

AN - SCOPUS:0035840970

SN - 0039-6028

VL - 492

SP - 34

EP - 40

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Initial stages of Fe growth on clean and Sb-terminated Si(1 0 0) surfaces

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this