Abstract
Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46× 10-3 cm2 and produced transmittance of 95.8% at wavelength of 460 nm when annealed at 530°C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with the In/ITO contacts was enhanced 91% at 20 mA compared to LEDs with the oxidized NiAu contacts.
Original language | English |
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Pages (from-to) | 270-272 |
Number of pages | 3 |
Journal | Electrochemical and Solid-State Letters |
Volume | 10 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2007 Jan 1 |
ASJC Scopus subject areas
- General Chemical Engineering
- General Materials Science
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering