In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes

June O. Song; Kyung Kook Kim; Hyunsoo Kim; Hyun Gi Hong; Hyeonseok Na; Tae Yeon Seong

doi:10.1149/1.2750442

In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes

June O. Song^*, Kyung Kook Kim, Hyunsoo Kim, Hyun Gi Hong, Hyeonseok Na, Tae Yeon Seong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46× 10-3 cm2 and produced transmittance of 95.8% at wavelength of 460 nm when annealed at 530°C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with the In/ITO contacts was enhanced 91% at 20 mA compared to LEDs with the oxidized NiAu contacts.

Original language	English
Pages (from-to)	270-272
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	9
DOIs	https://doi.org/10.1149/1.2750442
Publication status	Published - 2007 Jan 1

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes",

abstract = "Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46× 10-3 cm2 and produced transmittance of 95.8\% at wavelength of 460 nm when annealed at 530°C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with the In/ITO contacts was enhanced 91\% at 20 mA compared to LEDs with the oxidized NiAu contacts.",

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language = "English",

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T1 - In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes

AU - Song, June O.

AU - Kim, Kyung Kook

AU - Kim, Hyunsoo

AU - Hong, Hyun Gi

AU - Na, Hyeonseok

AU - Seong, Tae Yeon

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46× 10-3 cm2 and produced transmittance of 95.8% at wavelength of 460 nm when annealed at 530°C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with the In/ITO contacts was enhanced 91% at 20 mA compared to LEDs with the oxidized NiAu contacts.

AB - Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46× 10-3 cm2 and produced transmittance of 95.8% at wavelength of 460 nm when annealed at 530°C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with the In/ITO contacts was enhanced 91% at 20 mA compared to LEDs with the oxidized NiAu contacts.

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U2 - 10.1149/1.2750442

DO - 10.1149/1.2750442

M3 - Article

AN - SCOPUS:34547194196

SN - 1099-0062

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 9

ER -

In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes

Abstract

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