Innovation ultra thin packaging for RF-MEMS devices

Yun Kwon Park; Yong Kook Kim; Chul Ju Kim; Byeong Kwon Ju; Jong Oh Park

doi:10.1109/SENSOR.2003.1215621

Innovation ultra thin packaging for RF-MEMS devices

Yun Kwon Park, Yong Kook Kim, Chul Ju Kim, Byeong Kwon Ju, Jong Oh Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes for vertical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. To make up hermetic sealing, metal bonding (Au/Sn-Au) was used in the sealing line. Bonding strength after dipping in the water was about 60Mpa and there was no change. The packaged RF device has a reflection loss under -19 [dB] and a insertion loss of -0.54∼-0.67 [dB]. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.

Original language	English
Title of host publication	TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	903-906
Number of pages	4
ISBN (Electronic)	0780377311, 9780780377318
DOIs	https://doi.org/10.1109/SENSOR.2003.1215621
Publication status	Published - 2003
Externally published	Yes
Event	12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States Duration: 2003 Jun 8 → 2003 Jun 12

Publication series

Name	TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
Volume	1

Other

Other	12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
Country/Territory	United States
City	Boston
Period	03/6/8 → 03/6/12

Keywords

Chemical processes
Chemical technology
Gold
Optical reflection
Packaging
Radio frequency
Radiofrequency microelectromechanical systems
Silicon
Technological innovation
Wafer bonding

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/SENSOR.2003.1215621

Cite this

Park, Y. K., Kim, Y. K., Kim, C. J., Ju, B. K., & Park, J. O. (2003). Innovation ultra thin packaging for RF-MEMS devices. In TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers (pp. 903-906). [1215621] (TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SENSOR.2003.1215621

Innovation ultra thin packaging for RF-MEMS devices. / Park, Yun Kwon; Kim, Yong Kook; Kim, Chul Ju et al.
TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2003. p. 903-906 1215621 (TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, YK, Kim, YK, Kim, CJ, Ju, BK & Park, JO 2003, Innovation ultra thin packaging for RF-MEMS devices. in TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers., 1215621, TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers, vol. 1, Institute of Electrical and Electronics Engineers Inc., pp. 903-906, 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers, Boston, United States, 03/6/8. https://doi.org/10.1109/SENSOR.2003.1215621

Park YK, Kim YK, Kim CJ, Ju BK, Park JO. Innovation ultra thin packaging for RF-MEMS devices. In TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2003. p. 903-906. 1215621. (TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers). doi: 10.1109/SENSOR.2003.1215621

Park, Yun Kwon ; Kim, Yong Kook ; Kim, Chul Ju et al. / Innovation ultra thin packaging for RF-MEMS devices. TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 903-906 (TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers).

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abstract = "In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes for vertical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. To make up hermetic sealing, metal bonding (Au/Sn-Au) was used in the sealing line. Bonding strength after dipping in the water was about 60Mpa and there was no change. The packaged RF device has a reflection loss under -19 [dB] and a insertion loss of -0.54∼-0.67 [dB]. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.",

keywords = "Chemical processes, Chemical technology, Gold, Optical reflection, Packaging, Radio frequency, Radiofrequency microelectromechanical systems, Silicon, Technological innovation, Wafer bonding",

author = "Park, {Yun Kwon} and Kim, {Yong Kook} and Kim, {Chul Ju} and Ju, {Byeong Kwon} and Park, {Jong Oh}",

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AB - In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes for vertical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. To make up hermetic sealing, metal bonding (Au/Sn-Au) was used in the sealing line. Bonding strength after dipping in the water was about 60Mpa and there was no change. The packaged RF device has a reflection loss under -19 [dB] and a insertion loss of -0.54∼-0.67 [dB]. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.

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Innovation ultra thin packaging for RF-MEMS devices

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