InP HBT oscillators operating up to 682 GHz with coupled-line load for improved efficiency and output power

Jungsoo Kim; Heekang Son; Doyoon Kim; Kiryong Song; Junghwan Yoo; Jae Sung Rieh

doi:10.1109/IMS30576.2020.9223991

InP HBT oscillators operating up to 682 GHz with coupled-line load for improved efficiency and output power

Jungsoo Kim, Heekang Son, Doyoon Kim, Kiryong Song, Junghwan Yoo, Jae Sung Rieh

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

THz oscillators operating up to 680 GHz have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. This work shows that the common-base cross-coupled push-push oscillator topology is improved by adopting a coupled-line structure, in which DC blocking capacitors and other transmission lines are replaced by a pair of coupled lines. The coupled lines enable efficient impedance and phase matching with a small area, resulting in improved output power and efficiency. Three types of oscillators with a slight dimensional variation were fabricated. The measured oscillation frequency of the three oscillators are 628 - 682 GHz, 556 - 610 GHz and 509 - 548 GHz, respectively, with bias-based tuning. The maximum output power and DC-to-RF efficiency of oscillators are up to -10 dBm and 0.19 %, respectively. The circuit occupies only around 0.014 mm2 excluding the probing pads.

Original language	English
Title of host publication	IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	767-770
Number of pages	4
ISBN (Electronic)	9781728168159
DOIs	https://doi.org/10.1109/IMS30576.2020.9223991
Publication status	Published - 2020 Aug
Event	2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States Duration: 2020 Aug 4 → 2020 Aug 6

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2020-August
ISSN (Print)	0149-645X

Conference

Conference	2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Country/Territory	United States
City	Virtual, Los Angeles
Period	20/8/4 → 20/8/6

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korea government (MSIT) (No. 2016-0-00185).

Publisher Copyright:
© 2020 IEEE.

Keywords

Coupled-line
Heterojunction bipolar transistor (HBT)
Oscillators
Terahertz (THz)

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/IMS30576.2020.9223991

Cite this

Kim, J., Son, H., Kim, D., Song, K., Yoo, J., & Rieh, J. S. (2020). InP HBT oscillators operating up to 682 GHz with coupled-line load for improved efficiency and output power. In IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium (pp. 767-770). Article 9223991 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2020-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMS30576.2020.9223991

InP HBT oscillators operating up to 682 GHz with coupled-line load for improved efficiency and output power. / Kim, Jungsoo; Son, Heekang; Kim, Doyoon et al.
IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers Inc., 2020. p. 767-770 9223991 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2020-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, J, Son, H, Kim, D, Song, K, Yoo, J & Rieh, JS 2020, InP HBT oscillators operating up to 682 GHz with coupled-line load for improved efficiency and output power. in IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium., 9223991, IEEE MTT-S International Microwave Symposium Digest, vol. 2020-August, Institute of Electrical and Electronics Engineers Inc., pp. 767-770, 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020, Virtual, Los Angeles, United States, 20/8/4. https://doi.org/10.1109/IMS30576.2020.9223991

Kim J, Son H, Kim D, Song K, Yoo J, Rieh JS. InP HBT oscillators operating up to 682 GHz with coupled-line load for improved efficiency and output power. In IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers Inc. 2020. p. 767-770. 9223991. (IEEE MTT-S International Microwave Symposium Digest). doi: 10.1109/IMS30576.2020.9223991

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abstract = "THz oscillators operating up to 680 GHz have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. This work shows that the common-base cross-coupled push-push oscillator topology is improved by adopting a coupled-line structure, in which DC blocking capacitors and other transmission lines are replaced by a pair of coupled lines. The coupled lines enable efficient impedance and phase matching with a small area, resulting in improved output power and efficiency. Three types of oscillators with a slight dimensional variation were fabricated. The measured oscillation frequency of the three oscillators are 628 - 682 GHz, 556 - 610 GHz and 509 - 548 GHz, respectively, with bias-based tuning. The maximum output power and DC-to-RF efficiency of oscillators are up to -10 dBm and 0.19 %, respectively. The circuit occupies only around 0.014 mm2 excluding the probing pads. ",

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AU - Yoo, Junghwan

AU - Rieh, Jae Sung

N1 - Funding Information: ACKNOWLEDGMENT This work was supported by Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korea government (MSIT) (No. 2016-0-00185). Publisher Copyright: © 2020 IEEE.

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N2 - THz oscillators operating up to 680 GHz have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. This work shows that the common-base cross-coupled push-push oscillator topology is improved by adopting a coupled-line structure, in which DC blocking capacitors and other transmission lines are replaced by a pair of coupled lines. The coupled lines enable efficient impedance and phase matching with a small area, resulting in improved output power and efficiency. Three types of oscillators with a slight dimensional variation were fabricated. The measured oscillation frequency of the three oscillators are 628 - 682 GHz, 556 - 610 GHz and 509 - 548 GHz, respectively, with bias-based tuning. The maximum output power and DC-to-RF efficiency of oscillators are up to -10 dBm and 0.19 %, respectively. The circuit occupies only around 0.014 mm2 excluding the probing pads.

AB - THz oscillators operating up to 680 GHz have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. This work shows that the common-base cross-coupled push-push oscillator topology is improved by adopting a coupled-line structure, in which DC blocking capacitors and other transmission lines are replaced by a pair of coupled lines. The coupled lines enable efficient impedance and phase matching with a small area, resulting in improved output power and efficiency. Three types of oscillators with a slight dimensional variation were fabricated. The measured oscillation frequency of the three oscillators are 628 - 682 GHz, 556 - 610 GHz and 509 - 548 GHz, respectively, with bias-based tuning. The maximum output power and DC-to-RF efficiency of oscillators are up to -10 dBm and 0.19 %, respectively. The circuit occupies only around 0.014 mm2 excluding the probing pads.

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InP HBT oscillators operating up to 682 GHz with coupled-line load for improved efficiency and output power

Abstract

Publication series

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Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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