Insertion loss characteristics of passive devices fabricated on anodized aluminum oxide layers formed on Si substrates

Hye Min Ji; Won Sang Lee; Daniel S. Choi; Young Keun Kim

doi:10.1016/j.sna.2009.11.021

Insertion loss characteristics of passive devices fabricated on anodized aluminum oxide layers formed on Si substrates

Hye Min Ji, Won Sang Lee, Daniel S. Choi, Young Keun Kim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report on the high-frequency insertion loss behaviors of a passive device patterned on a new type of insulating layer that consists of nanoporous anodized aluminum oxide (AAO) on a Si substrate. The transmission line loss and characteristics of simple capacitors were characterized by a series of RF measurements. The insertion loss of the transmission line on the hybrid insulating layer consisting of AAO and silicon dioxide (SiO₂) was smaller than that on the SiO₂ single insulating layer. This hybrid insulating layer approach appears to be promising for the development of integrated passive devices that require an insertion loss of the order of -0.621 dB up to 20 GHz. A simple MIM capacitor manufactured on the hybrid insulating layer operated very well in the RF range.

Original language	English
Pages (from-to)	32-35
Number of pages	4
Journal	Sensors and Actuators, A: Physical
Volume	157
Issue number	1
DOIs	https://doi.org/10.1016/j.sna.2009.11.021
Publication status	Published - 2010 Jan

Bibliographical note

Funding Information:
This work was supported by Grant M10500000105-05J0000-10510 from National Research Foundation of Korea . Authors thank Prof. M.I. Kim for the data analysis.

Keywords

Anodized alumina oxide
Capacitor
Insertion loss
Integrated passive device

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/j.sna.2009.11.021

Cite this

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title = "Insertion loss characteristics of passive devices fabricated on anodized aluminum oxide layers formed on Si substrates",

abstract = "We report on the high-frequency insertion loss behaviors of a passive device patterned on a new type of insulating layer that consists of nanoporous anodized aluminum oxide (AAO) on a Si substrate. The transmission line loss and characteristics of simple capacitors were characterized by a series of RF measurements. The insertion loss of the transmission line on the hybrid insulating layer consisting of AAO and silicon dioxide (SiO2) was smaller than that on the SiO2 single insulating layer. This hybrid insulating layer approach appears to be promising for the development of integrated passive devices that require an insertion loss of the order of -0.621 dB up to 20 GHz. A simple MIM capacitor manufactured on the hybrid insulating layer operated very well in the RF range.",

keywords = "Anodized alumina oxide, Capacitor, Insertion loss, Integrated passive device",

author = "Ji, {Hye Min} and Lee, {Won Sang} and Choi, {Daniel S.} and Kim, {Young Keun}",

note = "Funding Information: This work was supported by Grant M10500000105-05J0000-10510 from National Research Foundation of Korea . Authors thank Prof. M.I. Kim for the data analysis. ",

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AU - Ji, Hye Min

AU - Lee, Won Sang

AU - Choi, Daniel S.

AU - Kim, Young Keun

N1 - Funding Information: This work was supported by Grant M10500000105-05J0000-10510 from National Research Foundation of Korea . Authors thank Prof. M.I. Kim for the data analysis.

PY - 2010/1

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N2 - We report on the high-frequency insertion loss behaviors of a passive device patterned on a new type of insulating layer that consists of nanoporous anodized aluminum oxide (AAO) on a Si substrate. The transmission line loss and characteristics of simple capacitors were characterized by a series of RF measurements. The insertion loss of the transmission line on the hybrid insulating layer consisting of AAO and silicon dioxide (SiO2) was smaller than that on the SiO2 single insulating layer. This hybrid insulating layer approach appears to be promising for the development of integrated passive devices that require an insertion loss of the order of -0.621 dB up to 20 GHz. A simple MIM capacitor manufactured on the hybrid insulating layer operated very well in the RF range.

AB - We report on the high-frequency insertion loss behaviors of a passive device patterned on a new type of insulating layer that consists of nanoporous anodized aluminum oxide (AAO) on a Si substrate. The transmission line loss and characteristics of simple capacitors were characterized by a series of RF measurements. The insertion loss of the transmission line on the hybrid insulating layer consisting of AAO and silicon dioxide (SiO2) was smaller than that on the SiO2 single insulating layer. This hybrid insulating layer approach appears to be promising for the development of integrated passive devices that require an insertion loss of the order of -0.621 dB up to 20 GHz. A simple MIM capacitor manufactured on the hybrid insulating layer operated very well in the RF range.

KW - Anodized alumina oxide

KW - Capacitor

KW - Insertion loss

KW - Integrated passive device

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DO - 10.1016/j.sna.2009.11.021

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JO - Sensors and Actuators, A: Physical

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Insertion loss characteristics of passive devices fabricated on anodized aluminum oxide layers formed on Si substrates

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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