In this study, we propose an integrate-and-fire (I&F) neuron circuit using a p-n-p-n diode that utilizes a latch-up phenomenon and investigate the I&F operation without external bias voltages using mixed-mode technology computer-aided design (TCAD) simulations. The neuron circuit composed of one p-n-p-n diode, three MOSFETs, and a capacitor operates with no external bias lines, and its I&F operation has an energy consumption of 0.59 fJ with an energy efficiency of 96.3% per spike. The presented neuron circuit is superior in terms of structural simplicity, number of external bias lines, and energy efficiency in comparison with that constructed with only MOSFETs. Moreover, the neuron circuit exhibits the features of controlling the firing frequency through the amplitude and time width of the synaptic pulse despite of the reduced number of the components and no external bias lines.
Bibliographical noteFunding Information:
This research was supported in part by the Ministry of Trade, Industry & Energy (MOTIE) (10067791) and Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices, in part by the National Research Foundation of Korea (NRF) grant funded by the Korea Government (MSIT) (2020R1A2C3004538), the Brain Korea 21 Plus Project of 2020 through the NRF funded by the Ministry of Science, and ICT & Future Planning, and the Korea University Grant.
© Copyright © 2021 Park, Woo, Lim, Cho and Kim.
- absence of external bias lines
- integrate-and-fire neuron
- latch-up phenomenon
- p-n-p-n diode
- spiking neural networks
- technology computer-aided design simulation
ASJC Scopus subject areas