Abstract
Although advanced devices based on nanotubes (NTs) and nanowires (NWs) are drawing much attention, devices based on a single NT or NW are not suitable for general manufacturing purposes, as it is still extremely difficult to control the electronic properties, growth and alignment of individual NTs or NWs on an industrially reliable scale. An alternative strategy for implementing NTs or NWs in real-world devices is the use of NT- or NW-network-based structures containing a number of NTs or NWs. Herein, we review the recent progress in NT/NW-network-based integrated devices. The technology for NW/NT-network-based devices is supported by massive integration methods, such as directed assembly, printing and directed growth, and devices based on NW/NT networks display several unique properties, such as percolating conduction and scaling behaviors, that differentiate them from individual NT/NW-based devices. A variety of applications are possible for NT/NW networks, including transistors and sensors, all of which offer unique characteristics for use in integrated nanoelectronics.
| Original language | English |
|---|---|
| Pages (from-to) | 103-111 |
| Number of pages | 9 |
| Journal | NPG Asia Materials |
| Volume | 2 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2010 Jul |
| Externally published | Yes |
Bibliographical note
Funding Information:The authors acknowledge the support of the Korea Science and Engineering Foundation (No. 2009-0079103) and the Converging Research Center Program through the National Research Foundation of Korea, funded by the Korean Ministry of Education, Science and Technology (No. 2009-0081999). S. Hong acknowledges the support of the ‘Program of Development of Core Element Technology Industrialization of Next Generation based on Nano Technology’ of the Ministry of Knowledge Economy, Korea.
ASJC Scopus subject areas
- Modelling and Simulation
- General Materials Science
- Condensed Matter Physics