Interaction of NO with the MgO(100) surface studied by infrared reflection absorption spectroscopy

C. M. Kim; C. W. Yi; B. K. Min; A. K. Santra; D. W. Goodman

doi:10.1021/la020170k

Interaction of NO with the MgO(100) surface studied by infrared reflection absorption spectroscopy

C. M. Kim, C. W. Yi, B. K. Min, A. K. Santra, D. W. Goodman

GREEN SCHOOL (Graduate School of Energy and Environment)

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Infrared reflection absorption spectroscopy (IRAS) at low temperatures (ca. 40 K) has been used to study the interaction of NO with highly ordered MgO(100) thin films. Dimer formation has been observed in the multilayer regime at (<60 K) and in the monolayer regime at 60-70 K. Using ¹⁵NO, it is shown that dimeric NO, (NO)₂, is the key intermediate in the formation of N₂O above 70 K.

Original language	English
Pages (from-to)	5651-5652
Number of pages	2
Journal	Langmuir
Volume	18
Issue number	15
DOIs	https://doi.org/10.1021/la020170k
Publication status	Published - 2002 Jul 23

Bibliographical note

Funding Information:
* Research supported by National Research Council of Italy, Special Project RAISA, Sub-project N. 1 Paper N. 1412

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Surfaces and Interfaces
Spectroscopy
Electrochemistry

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@article{fadcbf6435c74cdf82ce1bbb4a04b4a3,

title = "Interaction of NO with the MgO(100) surface studied by infrared reflection absorption spectroscopy",

abstract = "Infrared reflection absorption spectroscopy (IRAS) at low temperatures (ca. 40 K) has been used to study the interaction of NO with highly ordered MgO(100) thin films. Dimer formation has been observed in the multilayer regime at (<60 K) and in the monolayer regime at 60-70 K. Using 15NO, it is shown that dimeric NO, (NO)2, is the key intermediate in the formation of N2O above 70 K.",

author = "Kim, {C. M.} and Yi, {C. W.} and Min, {B. K.} and Santra, {A. K.} and Goodman, {D. W.}",

note = "Funding Information: * Research supported by National Research Council of Italy, Special Project RAISA, Sub-project N. 1 Paper N. 1412",

year = "2002",

month = jul,

day = "23",

doi = "10.1021/la020170k",

language = "English",

volume = "18",

pages = "5651--5652",

journal = "Langmuir",

issn = "0743-7463",

publisher = "American Chemical Society",

number = "15",

}

TY - JOUR

T1 - Interaction of NO with the MgO(100) surface studied by infrared reflection absorption spectroscopy

AU - Kim, C. M.

AU - Yi, C. W.

AU - Min, B. K.

AU - Santra, A. K.

AU - Goodman, D. W.

N1 - Funding Information: * Research supported by National Research Council of Italy, Special Project RAISA, Sub-project N. 1 Paper N. 1412

PY - 2002/7/23

Y1 - 2002/7/23

N2 - Infrared reflection absorption spectroscopy (IRAS) at low temperatures (ca. 40 K) has been used to study the interaction of NO with highly ordered MgO(100) thin films. Dimer formation has been observed in the multilayer regime at (<60 K) and in the monolayer regime at 60-70 K. Using 15NO, it is shown that dimeric NO, (NO)2, is the key intermediate in the formation of N2O above 70 K.

AB - Infrared reflection absorption spectroscopy (IRAS) at low temperatures (ca. 40 K) has been used to study the interaction of NO with highly ordered MgO(100) thin films. Dimer formation has been observed in the multilayer regime at (<60 K) and in the monolayer regime at 60-70 K. Using 15NO, it is shown that dimeric NO, (NO)2, is the key intermediate in the formation of N2O above 70 K.

UR - http://www.scopus.com/inward/record.url?scp=0037162617&partnerID=8YFLogxK

U2 - 10.1021/la020170k

DO - 10.1021/la020170k

M3 - Article

AN - SCOPUS:0037162617

SN - 0743-7463

VL - 18

SP - 5651

EP - 5652

JO - Langmuir

JF - Langmuir

IS - 15

ER -

Interaction of NO with the MgO(100) surface studied by infrared reflection absorption spectroscopy

Abstract

Bibliographical note

ASJC Scopus subject areas

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