Interface analysis of ultrathin SiO2 layers between c-Si substrates and phosphorus-doped poly-Si by theoretical surface potential analysis using the injection-dependent lifetime

Sungjin Choi, Jimin Baek, Taejun Kim, Kwan Hong Min, Myeong Sang Jeong, Hee eun Song, Min Gu Kang, Donghwan Kim, Yoon Mook Kang, Hae Seok Lee, Jae Min Myoung, Sungeun Park

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