Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes

Yeonsik Jang; Sung Joo Kwon; Jaeho Shin; Hyunhak Jeong; Wang Taek Hwang; Junwoo Kim; Jeongmin Koo; Taeg Yeoung Ko; Sunmin Ryu; Gunuk Wang; Tae Woo Lee; Takhee Lee

doi:10.1021/acsami.7b13156

Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes

Yeonsik Jang, Sung Joo Kwon, Jaeho Shin, Hyunhak Jeong, Wang Taek Hwang, Junwoo Kim, Jeongmin Koo, Taeg Yeoung Ko, Sunmin Ryu, Gunuk Wang, Tae Woo Lee, Takhee Lee

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Abstract

In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of ∼4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (∼5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces.

Original language	English
Pages (from-to)	42043-42049
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	9
Issue number	48
DOIs	https://doi.org/10.1021/acsami.7b13156
Publication status	Published - 2017 Dec 6

Bibliographical note

Funding Information:
This work was accomplished through the financial support from the National Research Foundation of Korea: grant no. 2012026372 (National Creative Research Laboratory Program), 2014H1A2A1021528 (Global PhD Fellowship), 2016R1A3B1908431, and 2016R1C1B2007330.

Keywords

benzenedithiol (BDT)
charge transport
coherent transport model
graphene doping
interface engineering
molecular electronics
self-assembled monolayer
transition voltage spectroscopy

ASJC Scopus subject areas

Materials Science(all)

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10.1021/acsami.7b13156

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Jang, Y., Kwon, S. J., Shin, J., Jeong, H., Hwang, W. T., Kim, J., Koo, J., Ko, T. Y., Ryu, S., Wang, G., Lee, T. W., & Lee, T. (2017). Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes. ACS Applied Materials and Interfaces, 9(48), 42043-42049. https://doi.org/10.1021/acsami.7b13156

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abstract = "In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of ∼4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (∼5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces.",

keywords = "benzenedithiol (BDT), charge transport, coherent transport model, graphene doping, interface engineering, molecular electronics, self-assembled monolayer, transition voltage spectroscopy",

author = "Yeonsik Jang and Kwon, {Sung Joo} and Jaeho Shin and Hyunhak Jeong and Hwang, {Wang Taek} and Junwoo Kim and Jeongmin Koo and Ko, {Taeg Yeoung} and Sunmin Ryu and Gunuk Wang and Lee, {Tae Woo} and Takhee Lee",

note = "Funding Information: This work was accomplished through the financial support from the National Research Foundation of Korea: grant no. 2012026372 (National Creative Research Laboratory Program), 2014H1A2A1021528 (Global PhD Fellowship), 2016R1A3B1908431, and 2016R1C1B2007330.",

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AU - Jeong, Hyunhak

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AU - Kim, Junwoo

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AU - Ko, Taeg Yeoung

AU - Ryu, Sunmin

AU - Wang, Gunuk

AU - Lee, Tae Woo

AU - Lee, Takhee

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PY - 2017/12/6

Y1 - 2017/12/6

N2 - In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of ∼4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (∼5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces.

AB - In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of ∼4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (∼5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces.

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Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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