Interface Mn nanoclusters in YMnO3/Si ferroelectric gate structures revealed by electron magnetic resonance

Chang Hoon Lee; Sang Hwa Kim; Jin Young Choi; Joon Kim

doi:10.1016/j.cap.2005.06.005

Interface Mn nanoclusters in YMnO₃/Si ferroelectric gate structures revealed by electron magnetic resonance

Chang Hoon Lee, Sang Hwa Kim, Jin Young Choi, Joon Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this work, systematic X-band electron magnetic resonance (EMR) studies for YMnO₃/Si ferroelectric gate structures were performed to trace a variation of interface characteristics as different sputtering condition of O₂/(Ar + O₂) ratio. Our result showed that the EMR signal intensities were increased with increasing O₂/(Ar + O₂) ratio. In addition, it was suggested from detailed analyses that the observed EMR signals could be originated from Mn nanoclusters existing in both the polycrystalline Y₂O₃ layer and the amorphous Si-enriched Y-Si interface layer in YMnO₃/Si thin film structure. And also, a correlation between the decrease of crystallinity in YMnO₃/Si film and the content of Mn nanoclusters within the polycrystalline Y₂O₃ layer and/or the amorphous Y-Si layer was discussed.

Original language	English
Pages (from-to)	10-12
Number of pages	3
Journal	Current Applied Physics
Volume	7
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2005.06.005
Publication status	Published - 2007 Jan

Keywords

Electron magnetic resonance
Mn nanoclusters
YMnO/Si interface

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2005.06.005

Cite this

@article{9430a50e11ef43b3b638998dd0773ae5,

title = "Interface Mn nanoclusters in YMnO3/Si ferroelectric gate structures revealed by electron magnetic resonance",

abstract = "In this work, systematic X-band electron magnetic resonance (EMR) studies for YMnO3/Si ferroelectric gate structures were performed to trace a variation of interface characteristics as different sputtering condition of O2/(Ar + O2) ratio. Our result showed that the EMR signal intensities were increased with increasing O2/(Ar + O2) ratio. In addition, it was suggested from detailed analyses that the observed EMR signals could be originated from Mn nanoclusters existing in both the polycrystalline Y2O3 layer and the amorphous Si-enriched Y-Si interface layer in YMnO3/Si thin film structure. And also, a correlation between the decrease of crystallinity in YMnO3/Si film and the content of Mn nanoclusters within the polycrystalline Y2O3 layer and/or the amorphous Y-Si layer was discussed.",

keywords = "Electron magnetic resonance, Mn nanoclusters, YMnO/Si interface",

author = "Lee, {Chang Hoon} and Kim, {Sang Hwa} and Choi, {Jin Young} and Joon Kim",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2002-070-C00073 for Lee, C.H., Kim, J and KRF 2004-005-D00087 for Choi, J.Y.) The authors also gratefully acknowledge Korea University{\textquoteright}s support for the Korea University{\textquoteright}s 100th Anniversary Symposium on the State of the Art and the Prospect of the Interdisciplinary Nano Sciences.",

year = "2007",

month = jan,

doi = "10.1016/j.cap.2005.06.005",

language = "English",

volume = "7",

pages = "10--12",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Interface Mn nanoclusters in YMnO3/Si ferroelectric gate structures revealed by electron magnetic resonance

AU - Lee, Chang Hoon

AU - Kim, Sang Hwa

AU - Choi, Jin Young

AU - Kim, Joon

N1 - Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2002-070-C00073 for Lee, C.H., Kim, J and KRF 2004-005-D00087 for Choi, J.Y.) The authors also gratefully acknowledge Korea University’s support for the Korea University’s 100th Anniversary Symposium on the State of the Art and the Prospect of the Interdisciplinary Nano Sciences.

PY - 2007/1

Y1 - 2007/1

N2 - In this work, systematic X-band electron magnetic resonance (EMR) studies for YMnO3/Si ferroelectric gate structures were performed to trace a variation of interface characteristics as different sputtering condition of O2/(Ar + O2) ratio. Our result showed that the EMR signal intensities were increased with increasing O2/(Ar + O2) ratio. In addition, it was suggested from detailed analyses that the observed EMR signals could be originated from Mn nanoclusters existing in both the polycrystalline Y2O3 layer and the amorphous Si-enriched Y-Si interface layer in YMnO3/Si thin film structure. And also, a correlation between the decrease of crystallinity in YMnO3/Si film and the content of Mn nanoclusters within the polycrystalline Y2O3 layer and/or the amorphous Y-Si layer was discussed.

AB - In this work, systematic X-band electron magnetic resonance (EMR) studies for YMnO3/Si ferroelectric gate structures were performed to trace a variation of interface characteristics as different sputtering condition of O2/(Ar + O2) ratio. Our result showed that the EMR signal intensities were increased with increasing O2/(Ar + O2) ratio. In addition, it was suggested from detailed analyses that the observed EMR signals could be originated from Mn nanoclusters existing in both the polycrystalline Y2O3 layer and the amorphous Si-enriched Y-Si interface layer in YMnO3/Si thin film structure. And also, a correlation between the decrease of crystallinity in YMnO3/Si film and the content of Mn nanoclusters within the polycrystalline Y2O3 layer and/or the amorphous Y-Si layer was discussed.

KW - Electron magnetic resonance

KW - Mn nanoclusters

KW - YMnO/Si interface

UR - http://www.scopus.com/inward/record.url?scp=33749261629&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2005.06.005

DO - 10.1016/j.cap.2005.06.005

M3 - Article

AN - SCOPUS:33749261629

SN - 1567-1739

VL - 7

SP - 10

EP - 12

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1

ER -