Abstract
In this work, systematic X-band electron magnetic resonance (EMR) studies for YMnO3/Si ferroelectric gate structures were performed to trace a variation of interface characteristics as different sputtering condition of O2/(Ar + O2) ratio. Our result showed that the EMR signal intensities were increased with increasing O2/(Ar + O2) ratio. In addition, it was suggested from detailed analyses that the observed EMR signals could be originated from Mn nanoclusters existing in both the polycrystalline Y2O3 layer and the amorphous Si-enriched Y-Si interface layer in YMnO3/Si thin film structure. And also, a correlation between the decrease of crystallinity in YMnO3/Si film and the content of Mn nanoclusters within the polycrystalline Y2O3 layer and/or the amorphous Y-Si layer was discussed.
Original language | English |
---|---|
Pages (from-to) | 10-12 |
Number of pages | 3 |
Journal | Current Applied Physics |
Volume | 7 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2007 Jan |
Keywords
- Electron magnetic resonance
- Mn nanoclusters
- YMnO/Si interface
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)