Interface Mn nanoclusters in YMnO3/Si ferroelectric gate structures revealed by electron magnetic resonance

Chang Hoon Lee, Sang Hwa Kim, Jin Young Choi, Joon Kim

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1 Citation (Scopus)


In this work, systematic X-band electron magnetic resonance (EMR) studies for YMnO3/Si ferroelectric gate structures were performed to trace a variation of interface characteristics as different sputtering condition of O2/(Ar + O2) ratio. Our result showed that the EMR signal intensities were increased with increasing O2/(Ar + O2) ratio. In addition, it was suggested from detailed analyses that the observed EMR signals could be originated from Mn nanoclusters existing in both the polycrystalline Y2O3 layer and the amorphous Si-enriched Y-Si interface layer in YMnO3/Si thin film structure. And also, a correlation between the decrease of crystallinity in YMnO3/Si film and the content of Mn nanoclusters within the polycrystalline Y2O3 layer and/or the amorphous Y-Si layer was discussed.

Original languageEnglish
Pages (from-to)10-12
Number of pages3
JournalCurrent Applied Physics
Issue number1
Publication statusPublished - 2007 Jan

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2002-070-C00073 for Lee, C.H., Kim, J and KRF 2004-005-D00087 for Choi, J.Y.) The authors also gratefully acknowledge Korea University’s support for the Korea University’s 100th Anniversary Symposium on the State of the Art and the Prospect of the Interdisciplinary Nano Sciences.


  • Electron magnetic resonance
  • Mn nanoclusters
  • YMnO/Si interface

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy


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