Interface trap density of gate-all-around silicon nanowire field-effect transistors with TiN gate: Extraction and compact model

Faraz Najam, Yun Seop Yu, Keun Hwi Cho, Kyoung Hwan Yeo, Dong Won Kim, Jong Seung Hwang, Sansig Kim, Sung Woo Hwang

    Research output: Contribution to journalArticlepeer-review

    18 Citations (Scopus)

    Fingerprint

    Dive into the research topics of 'Interface trap density of gate-all-around silicon nanowire field-effect transistors with TiN gate: Extraction and compact model'. Together they form a unique fingerprint.

    Keyphrases

    Material Science

    Engineering