Interface Traps of Boron Nitride Gated Transition-Metal Dichalcogenide Channel Field-Effect Transistors by Temperature Dependent Pulse Pumping Method

Field-effect transistors (FETs) using transition-metal dichalcogenides (TMDs) as channel materials are being extensively explored for future nanoelectronic applications. The mobility of MoS₂ is significantly short of the theoretically anticipated value, primarily due to constraints imposed by charged impurities and phonon scattering. The interface states associated with charge trapping and detrapping can have a significant impact on mobility, necessitating a more comprehensive investigation and understanding. In this study, we fabricated MoS₂ FET with hexagonal boron nitride (hBN) as a dielectric in a top-gate configuration and single pulse charge pumping (SPCP) method for different temperatures was introduced to evaluate interface trap densities. In pulse measurements, electrons move from the source to the gate during the rising phase and from the gate to source during the falling phase, manifesting as peaks in the current in time domain measurement. The interface trap densities obtained from SPCP revealed variations with temperature, observed to be comparable with those estimated from the subthreshold swing.