Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition

M. H. Cho; H. S. Chang; D. W. Moon; S. K. Kang; B. K. Min; D. H. Ko; H. S. Kim; Paul C. McIntyre; J. H. Lee; J. H. Ku; N. I. Lee

doi:10.1063/1.1647703

Interfacial characteristics of HfO ₂ films grown on strained Si _0.7Ge _0.3 by atomic-layer deposition

M. H. Cho^*
, H. S. Chang
, D. W. Moon
, S. K. Kang
, B. K. Min
, D. H. Ko
, H. S. Kim
, Paul C. McIntyre
, J. H. Lee
, J. H. Ku
, N. I. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

The effects of the interfacial characteristics of HfO ₂ dielectrics on strained Si _0.7Ge _0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO _x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO ₂ film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO _x decreased the accumulation capacitance and increased the oxide trap charge.

Original language	English
Pages (from-to)	1171-1173
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	7
DOIs	https://doi.org/10.1063/1.1647703
Publication status	Published - 2004 Feb 16
Externally published	Yes

Bibliographical note

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1647703

Cite this

@article{7918466fcb004df297cb2fb7552fb4b2,

title = "Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition",

abstract = "The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.",

author = "Cho, \{M. H.\} and Chang, \{H. S.\} and Moon, \{D. W.\} and Kang, \{S. K.\} and Min, \{B. K.\} and Ko, \{D. H.\} and Kim, \{H. S.\} and McIntyre, \{Paul C.\} and Lee, \{J. H.\} and Ku, \{J. H.\} and Lee, \{N. I.\}",

year = "2004",

month = feb,

day = "16",

doi = "10.1063/1.1647703",

language = "English",

volume = "84",

pages = "1171--1173",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition

AU - Cho, M. H.

AU - Chang, H. S.

AU - Moon, D. W.

AU - Kang, S. K.

AU - Min, B. K.

AU - Ko, D. H.

AU - Kim, H. S.

AU - McIntyre, Paul C.

AU - Lee, J. H.

AU - Ku, J. H.

AU - Lee, N. I.

PY - 2004/2/16

Y1 - 2004/2/16

N2 - The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.

AB - The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.

UR - https://www.scopus.com/pages/publications/12144286164

U2 - 10.1063/1.1647703

DO - 10.1063/1.1647703

M3 - Article

AN - SCOPUS:12144286164

SN - 0003-6951

VL - 84

SP - 1171

EP - 1173

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

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