The physical and electronic properties of the chemical state of N-incorporated Hf-Al-oxide films were investigated. It was observed that the chemical states of Al oxide were changed by incorporated N but the chemical states of Hf oxide were not changed. It was also observed that after the annealing treatment the film thickness of the interfacial and upper layers remained. The results show that for a change in electrical characteristics of HfAlO high dielectric films, N-incorporation process is a major controlling factor.
Bibliographical noteFunding Information:
This work was supported by the National Program for Tera-level Nanodevices of MOST.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)