Interfacial characteristics of N-incorporated HfAlO high-k thin films

M. H. Cho; D. W. Moon; S. A. Park; Y. K. Kim; K. Jeong; S. K. Kang; D. H. Ko; S. J. Doh; J. H. Lee; N. I. Lee

doi:10.1063/1.1764595

Interfacial characteristics of N-incorporated HfAlO high-k thin films

M. H. Cho, D. W. Moon, S. A. Park, Y. K. Kim, K. Jeong, S. K. Kang, D. H. Ko, S. J. Doh, J. H. Lee, N. I. Lee

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

The physical and electronic properties of the chemical state of N-incorporated Hf-Al-oxide films were investigated. It was observed that the chemical states of Al oxide were changed by incorporated N but the chemical states of Hf oxide were not changed. It was also observed that after the annealing treatment the film thickness of the interfacial and upper layers remained. The results show that for a change in electrical characteristics of HfAlO high dielectric films, N-incorporation process is a major controlling factor.

Original language	English
Pages (from-to)	5243-5245
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	25
DOIs	https://doi.org/10.1063/1.1764595
Publication status	Published - 2004 Jun 21
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the National Program for Tera-level Nanodevices of MOST.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1764595

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@article{6ad43e25567b4ca894da1031f2109381,

title = "Interfacial characteristics of N-incorporated HfAlO high-k thin films",

abstract = "The physical and electronic properties of the chemical state of N-incorporated Hf-Al-oxide films were investigated. It was observed that the chemical states of Al oxide were changed by incorporated N but the chemical states of Hf oxide were not changed. It was also observed that after the annealing treatment the film thickness of the interfacial and upper layers remained. The results show that for a change in electrical characteristics of HfAlO high dielectric films, N-incorporation process is a major controlling factor.",

author = "Cho, {M. H.} and Moon, {D. W.} and Park, {S. A.} and Kim, {Y. K.} and K. Jeong and Kang, {S. K.} and Ko, {D. H.} and Doh, {S. J.} and Lee, {J. H.} and Lee, {N. I.}",

note = "Funding Information: This work was supported by the National Program for Tera-level Nanodevices of MOST. ",

year = "2004",

month = jun,

day = "21",

doi = "10.1063/1.1764595",

language = "English",

volume = "84",

pages = "5243--5245",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Interfacial characteristics of N-incorporated HfAlO high-k thin films

AU - Cho, M. H.

AU - Moon, D. W.

AU - Park, S. A.

AU - Kim, Y. K.

AU - Jeong, K.

AU - Kang, S. K.

AU - Ko, D. H.

AU - Doh, S. J.

AU - Lee, J. H.

AU - Lee, N. I.

N1 - Funding Information: This work was supported by the National Program for Tera-level Nanodevices of MOST.

PY - 2004/6/21

Y1 - 2004/6/21

N2 - The physical and electronic properties of the chemical state of N-incorporated Hf-Al-oxide films were investigated. It was observed that the chemical states of Al oxide were changed by incorporated N but the chemical states of Hf oxide were not changed. It was also observed that after the annealing treatment the film thickness of the interfacial and upper layers remained. The results show that for a change in electrical characteristics of HfAlO high dielectric films, N-incorporation process is a major controlling factor.

AB - The physical and electronic properties of the chemical state of N-incorporated Hf-Al-oxide films were investigated. It was observed that the chemical states of Al oxide were changed by incorporated N but the chemical states of Hf oxide were not changed. It was also observed that after the annealing treatment the film thickness of the interfacial and upper layers remained. The results show that for a change in electrical characteristics of HfAlO high dielectric films, N-incorporation process is a major controlling factor.

UR - http://www.scopus.com/inward/record.url?scp=3142724745&partnerID=8YFLogxK

U2 - 10.1063/1.1764595

DO - 10.1063/1.1764595

M3 - Article

AN - SCOPUS:3142724745

SN - 0003-6951

VL - 84

SP - 5243

EP - 5245

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Interfacial characteristics of N-incorporated HfAlO high-k thin films

Abstract

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