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Interfacial oxide growth and filling-up behaviour of the micro-gap in silicon fusion bonding processes
B. K. Ju
, M. H. Oh, K. H. Tchah
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Article
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peer-review
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Engineering & Materials Science
Annealing
100%
Oxides
86%
Fusion reactions
80%
Silicon
79%
Electric properties
26%
Atoms
26%
Diodes
23%
Plastic deformation
22%
Ultrasonics
21%
Scanning electron microscopy
19%
Water
13%
Temperature
10%
Chemical Compounds
Annealing
79%
Oxide
54%
Plastic Deformation
41%
Bubbling
41%
Electrical Property
28%
Strength
21%
Diffusion
20%
Time
12%