Interfacial Perpendicular Magnetic Anisotropy in Magnetic Tunnel Junctions Comprising CoFeB with FeNiSiB Layers

Do Kyun Kim; Minhyeok Lee; Junghoon Joo; Young Keun Kim

doi:10.1007/s13391-019-00183-2

Interfacial Perpendicular Magnetic Anisotropy in Magnetic Tunnel Junctions Comprising CoFeB with FeNiSiB Layers

Do Kyun Kim, Minhyeok Lee, Junghoon Joo, Young Keun Kim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Abstract: Controlling ferromagnetic thickness (t) and properties such as saturation magnetization (M_s) and effective magnetic anisotropy constant (K_eff) has been regarded as critical for the performance of magnetic tunnel junctions (MTJs) with interfacial perpendicular magnetic anisotropy. Here, we report the effects of hybridizing a CoFeB layer with a FeNiSiB layer as part of a magnetic free layer structure. We deposited thin film stacks by magnetron sputtering on Si wafers with thermal oxides and carried out post-deposition heat treatment at 300 °C for 1 h in a vacuum under a magnetic field. We found that M_s and K_eff could be tuned by adding a layer of amorphous FeNiSiB. While the M_s and K_eff values were modified, the tunneling magnetoresistance (TMR) ratios of the MTJs were maintained, even though the CoFeB thickness was decreased by half. Moreover, an asymmetric bias voltage dependence of TMR was suppressed in the MTJs with FeNiSiB/CoFeB hybrid free layers due to improvements in the interface quality between the CoFeB/MgO interfaces. Graphic Abstract: [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	35-40
Number of pages	6
Journal	Electronic Materials Letters
Volume	16
Issue number	1
DOIs	https://doi.org/10.1007/s13391-019-00183-2
Publication status	Published - 2020 Jan 1

Bibliographical note

Funding Information:
This work was supported in part by the Future Materials Discovery Program through the National Research Foundation of Korea, funded by the Ministry of Science and ICT (Grant No. 2015M3D1A1070465), by the Samsung Electronics’ University R&D program. Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Keywords

CoFeB
FeNiSiB
Hybrid free layer
Magnetic tunnel junction
Perpendicular magnetic anisotropy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1007/s13391-019-00183-2

Cite this

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title = "Interfacial Perpendicular Magnetic Anisotropy in Magnetic Tunnel Junctions Comprising CoFeB with FeNiSiB Layers",

abstract = "Abstract: Controlling ferromagnetic thickness (t) and properties such as saturation magnetization (Ms) and effective magnetic anisotropy constant (Keff) has been regarded as critical for the performance of magnetic tunnel junctions (MTJs) with interfacial perpendicular magnetic anisotropy. Here, we report the effects of hybridizing a CoFeB layer with a FeNiSiB layer as part of a magnetic free layer structure. We deposited thin film stacks by magnetron sputtering on Si wafers with thermal oxides and carried out post-deposition heat treatment at 300 °C for 1 h in a vacuum under a magnetic field. We found that Ms and Keff could be tuned by adding a layer of amorphous FeNiSiB. While the Ms and Keff values were modified, the tunneling magnetoresistance (TMR) ratios of the MTJs were maintained, even though the CoFeB thickness was decreased by half. Moreover, an asymmetric bias voltage dependence of TMR was suppressed in the MTJs with FeNiSiB/CoFeB hybrid free layers due to improvements in the interface quality between the CoFeB/MgO interfaces. Graphic Abstract: [Figure not available: see fulltext.]",

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author = "Kim, {Do Kyun} and Minhyeok Lee and Junghoon Joo and Kim, {Young Keun}",

note = "Funding Information: This work was supported in part by the Future Materials Discovery Program through the National Research Foundation of Korea, funded by the Ministry of Science and ICT (Grant No. 2015M3D1A1070465), by the Samsung Electronics{\textquoteright} University R&D program. Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. ",

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AU - Kim, Do Kyun

AU - Lee, Minhyeok

AU - Joo, Junghoon

AU - Kim, Young Keun

N1 - Funding Information: This work was supported in part by the Future Materials Discovery Program through the National Research Foundation of Korea, funded by the Ministry of Science and ICT (Grant No. 2015M3D1A1070465), by the Samsung Electronics’ University R&D program. Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

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N2 - Abstract: Controlling ferromagnetic thickness (t) and properties such as saturation magnetization (Ms) and effective magnetic anisotropy constant (Keff) has been regarded as critical for the performance of magnetic tunnel junctions (MTJs) with interfacial perpendicular magnetic anisotropy. Here, we report the effects of hybridizing a CoFeB layer with a FeNiSiB layer as part of a magnetic free layer structure. We deposited thin film stacks by magnetron sputtering on Si wafers with thermal oxides and carried out post-deposition heat treatment at 300 °C for 1 h in a vacuum under a magnetic field. We found that Ms and Keff could be tuned by adding a layer of amorphous FeNiSiB. While the Ms and Keff values were modified, the tunneling magnetoresistance (TMR) ratios of the MTJs were maintained, even though the CoFeB thickness was decreased by half. Moreover, an asymmetric bias voltage dependence of TMR was suppressed in the MTJs with FeNiSiB/CoFeB hybrid free layers due to improvements in the interface quality between the CoFeB/MgO interfaces. Graphic Abstract: [Figure not available: see fulltext.]

AB - Abstract: Controlling ferromagnetic thickness (t) and properties such as saturation magnetization (Ms) and effective magnetic anisotropy constant (Keff) has been regarded as critical for the performance of magnetic tunnel junctions (MTJs) with interfacial perpendicular magnetic anisotropy. Here, we report the effects of hybridizing a CoFeB layer with a FeNiSiB layer as part of a magnetic free layer structure. We deposited thin film stacks by magnetron sputtering on Si wafers with thermal oxides and carried out post-deposition heat treatment at 300 °C for 1 h in a vacuum under a magnetic field. We found that Ms and Keff could be tuned by adding a layer of amorphous FeNiSiB. While the Ms and Keff values were modified, the tunneling magnetoresistance (TMR) ratios of the MTJs were maintained, even though the CoFeB thickness was decreased by half. Moreover, an asymmetric bias voltage dependence of TMR was suppressed in the MTJs with FeNiSiB/CoFeB hybrid free layers due to improvements in the interface quality between the CoFeB/MgO interfaces. Graphic Abstract: [Figure not available: see fulltext.]

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KW - Perpendicular magnetic anisotropy

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Interfacial Perpendicular Magnetic Anisotropy in Magnetic Tunnel Junctions Comprising CoFeB with FeNiSiB Layers

Abstract

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