Interfacial reaction depending on the stack structure of Al 2O3 and HfO2 during film growth and postannealing

M. H. Cho, K. B. Chung, H. S. Chang, D. W. Moon, S. A. Park, Y. K. Kim, K. Jeong, C. N. Whang, D. W. Lee, D. H. Ko, S. J. Doh, J. H. Lee, N. I. Lee

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


Interfacial reactions as a function of the stack structure of Al 2O3 and HfO2 grown on Si by atomic-layer deposition were examined by various physical and electrical measurements. In the case of an Al2O3 film with a buffer layer of HfO 2, reactions between the Al2O3 and Si layers were suppressed, while a HfO2 film with an Al2O 3 buffer layer on the Si readily interacted with Si, forming a Hf-Al-Si-O compound. The thickness of the interfacial layer increased dramatically after an annealing treatment in which a buffer layer of Al 2O3 was used, while no change in thickness was observed in the film in which a HfO2 buffer layer was used. Moreover, the stoichiometric change caused by a different reaction process altered the chemical state of the films, which affected charge trapping and the interfacial trap density.

Original languageEnglish
Pages (from-to)4115-4117
Number of pages3
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 2004 Nov 1
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 Century Frontier Programs.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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