Interlayer diffusion and specularity aspects of amorphous CoNbZr based spin valves

Ho Gun Cho; Young-geun Kim; Seong Rae Lee

doi:10.1109/INTMAG.2002.1001233

Interlayer diffusion and specularity aspects of amorphous CoNbZr based spin valves

Ho Gun Cho, Young-geun Kim, Seong Rae Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Among various factors that affect thermal degradation in spin valves (SV), Mn diffusion into pinned and Cu layers appears to be the most harmful to magnetoresistance (MR) and exchange coupling. The effects of CoNbZr (CNZ) film as underlayer and capping layer on thermal stability and Mn diffusion behavior were investigated at elevated temperatures in CNZ 2 nm (or Ta 5 nm)/CoFe/Cu/CoFe/IrMn/CNZ x nm (or Ta 5 nm) stacks. The normalized MR ratio and H_ex with respect to annealing time were evaluated.

Original language	English
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1001233
Publication status	Published - 2002
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: 2002 Apr 28 → 2002 May 2

Other

Other	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Country/Territory	Netherlands
City	Amsterdam
Period	02/4/28 → 02/5/2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

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10.1109/INTMAG.2002.1001233

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Cho, HG, Kim, Y & Lee, SR 2002, Interlayer diffusion and specularity aspects of amorphous CoNbZr based spin valves. in INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1001233, Institute of Electrical and Electronics Engineers Inc., 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002, Amsterdam, Netherlands, 02/4/28. https://doi.org/10.1109/INTMAG.2002.1001233

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title = "Interlayer diffusion and specularity aspects of amorphous CoNbZr based spin valves",

abstract = "Among various factors that affect thermal degradation in spin valves (SV), Mn diffusion into pinned and Cu layers appears to be the most harmful to magnetoresistance (MR) and exchange coupling. The effects of CoNbZr (CNZ) film as underlayer and capping layer on thermal stability and Mn diffusion behavior were investigated at elevated temperatures in CNZ 2 nm (or Ta 5 nm)/CoFe/Cu/CoFe/IrMn/CNZ x nm (or Ta 5 nm) stacks. The normalized MR ratio and Hex with respect to annealing time were evaluated.",

author = "Cho, {Ho Gun} and Young-geun Kim and Lee, {Seong Rae}",

year = "2002",

doi = "10.1109/INTMAG.2002.1001233",

language = "English",

booktitle = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 ; Conference date: 28-04-2002 Through 02-05-2002",

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AU - Cho, Ho Gun

AU - Kim, Young-geun

AU - Lee, Seong Rae

PY - 2002

Y1 - 2002

N2 - Among various factors that affect thermal degradation in spin valves (SV), Mn diffusion into pinned and Cu layers appears to be the most harmful to magnetoresistance (MR) and exchange coupling. The effects of CoNbZr (CNZ) film as underlayer and capping layer on thermal stability and Mn diffusion behavior were investigated at elevated temperatures in CNZ 2 nm (or Ta 5 nm)/CoFe/Cu/CoFe/IrMn/CNZ x nm (or Ta 5 nm) stacks. The normalized MR ratio and Hex with respect to annealing time were evaluated.

AB - Among various factors that affect thermal degradation in spin valves (SV), Mn diffusion into pinned and Cu layers appears to be the most harmful to magnetoresistance (MR) and exchange coupling. The effects of CoNbZr (CNZ) film as underlayer and capping layer on thermal stability and Mn diffusion behavior were investigated at elevated temperatures in CNZ 2 nm (or Ta 5 nm)/CoFe/Cu/CoFe/IrMn/CNZ x nm (or Ta 5 nm) stacks. The normalized MR ratio and Hex with respect to annealing time were evaluated.

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DO - 10.1109/INTMAG.2002.1001233

M3 - Conference contribution

AN - SCOPUS:85017203907

BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002

Y2 - 28 April 2002 through 2 May 2002

ER -

Interlayer diffusion and specularity aspects of amorphous CoNbZr based spin valves

Abstract

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