Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor

Kritsanu Tivakornsasithorn; Sangyeop Lee; Seul Ki Bac; Seonghoon Choi; Sanghoon Lee; Xinyu Liu; Margaret Dobrowolska; Jacek K. Furdyna

doi:10.1109/TMAG.2018.2859790

Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor

Kritsanu Tivakornsasithorn, Sangyeop Lee, Seul Ki Bac, Seonghoon Choi, Sanghoon Lee, Xinyu Liu, Margaret Dobrowolska, Jacek K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Interlayer exchange coupling (IEC) between ferromagnetic (FM) metal Fe and FM semiconductor GaMnAs has been investigated by using magnetotransport measurements. The realization of diverse magnetization alignments, including collinear and non-collinear configurations, between Fe and GaMnAs layers are observed during the magnetization reversal process measured by the planar Hall effect. Minor loop scan reveals the presence of FM IEC between Fe and GaMnAs, which systematically decreases as the temperature increases.

Original language	English
Article number	8439082
Journal	IEEE Transactions on Magnetics
Volume	55
Issue number	2
DOIs	https://doi.org/10.1109/TMAG.2018.2859790
Publication status	Published - 2019 Feb

Keywords

Ferromagnetic (fm) films
Interlayer exchange coupling (iec)
Magnetic anisotropy
Planar hall effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2018.2859790

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title = "Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor",

abstract = "Interlayer exchange coupling (IEC) between ferromagnetic (FM) metal Fe and FM semiconductor GaMnAs has been investigated by using magnetotransport measurements. The realization of diverse magnetization alignments, including collinear and non-collinear configurations, between Fe and GaMnAs layers are observed during the magnetization reversal process measured by the planar Hall effect. Minor loop scan reveals the presence of FM IEC between Fe and GaMnAs, which systematically decreases as the temperature increases.",

keywords = "Ferromagnetic (fm) films, Interlayer exchange coupling (iec), Magnetic anisotropy, Planar hall effect",

author = "Kritsanu Tivakornsasithorn and Sangyeop Lee and Bac, {Seul Ki} and Seonghoon Choi and Sanghoon Lee and Xinyu Liu and Margaret Dobrowolska and Furdyna, {Jacek K.}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education under Grant 2018R1D1A1A02042965, in part by the Ministry of Science and ICT under Grant 2018R1A4A1024157, in part by Korea University Grant, and in part by the National Science Foundation under Grant DMR 1400432. The work of K. Tivakornsasithorn was supported by NRF through the NRF Postdoctoral Fellowship Program for Foreign Researchers. Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

year = "2019",

month = feb,

doi = "10.1109/TMAG.2018.2859790",

language = "English",

volume = "55",

journal = "IEEE Transactions on Magnetics",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor

AU - Tivakornsasithorn, Kritsanu

AU - Lee, Sangyeop

AU - Bac, Seul Ki

AU - Choi, Seonghoon

AU - Lee, Sanghoon

AU - Liu, Xinyu

AU - Dobrowolska, Margaret

AU - Furdyna, Jacek K.

N1 - Funding Information: ACKNOWLEDGMENT This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education under Grant 2018R1D1A1A02042965, in part by the Ministry of Science and ICT under Grant 2018R1A4A1024157, in part by Korea University Grant, and in part by the National Science Foundation under Grant DMR 1400432. The work of K. Tivakornsasithorn was supported by NRF through the NRF Postdoctoral Fellowship Program for Foreign Researchers. Publisher Copyright: © 1965-2012 IEEE.

PY - 2019/2

Y1 - 2019/2

N2 - Interlayer exchange coupling (IEC) between ferromagnetic (FM) metal Fe and FM semiconductor GaMnAs has been investigated by using magnetotransport measurements. The realization of diverse magnetization alignments, including collinear and non-collinear configurations, between Fe and GaMnAs layers are observed during the magnetization reversal process measured by the planar Hall effect. Minor loop scan reveals the presence of FM IEC between Fe and GaMnAs, which systematically decreases as the temperature increases.

AB - Interlayer exchange coupling (IEC) between ferromagnetic (FM) metal Fe and FM semiconductor GaMnAs has been investigated by using magnetotransport measurements. The realization of diverse magnetization alignments, including collinear and non-collinear configurations, between Fe and GaMnAs layers are observed during the magnetization reversal process measured by the planar Hall effect. Minor loop scan reveals the presence of FM IEC between Fe and GaMnAs, which systematically decreases as the temperature increases.

KW - Ferromagnetic (fm) films

KW - Interlayer exchange coupling (iec)

KW - Magnetic anisotropy

KW - Planar hall effect

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U2 - 10.1109/TMAG.2018.2859790

DO - 10.1109/TMAG.2018.2859790

M3 - Article

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SN - 0018-9464

VL - 55

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 2

M1 - 8439082

ER -

Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor

Abstract

Keywords

ASJC Scopus subject areas

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