Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor

Kritsanu Tivakornsasithorn; Sangyeop Lee; Seul Ki Bac; Seonghoon Choi; Sanghoon Lee; Xinyu Liu; Margaret Dobrowolska; Jacek K. Furdyna

doi:10.1109/TMAG.2018.2859790

Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor

Kritsanu Tivakornsasithorn, Sangyeop Lee, Seul Ki Bac, Seonghoon Choi, Sanghoon Lee, Xinyu Liu, Margaret Dobrowolska, Jacek K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Interlayer exchange coupling (IEC) between ferromagnetic (FM) metal Fe and FM semiconductor GaMnAs has been investigated by using magnetotransport measurements. The realization of diverse magnetization alignments, including collinear and non-collinear configurations, between Fe and GaMnAs layers are observed during the magnetization reversal process measured by the planar Hall effect. Minor loop scan reveals the presence of FM IEC between Fe and GaMnAs, which systematically decreases as the temperature increases.

Original language	English
Article number	8439082
Journal	IEEE Transactions on Magnetics
Volume	55
Issue number	2
DOIs	https://doi.org/10.1109/TMAG.2018.2859790
Publication status	Published - 2019 Feb

Bibliographical note

Publisher Copyright:
© 1965-2012 IEEE.

Keywords

Ferromagnetic (fm) films
Interlayer exchange coupling (iec)
Magnetic anisotropy
Planar hall effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2018.2859790

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abstract = "Interlayer exchange coupling (IEC) between ferromagnetic (FM) metal Fe and FM semiconductor GaMnAs has been investigated by using magnetotransport measurements. The realization of diverse magnetization alignments, including collinear and non-collinear configurations, between Fe and GaMnAs layers are observed during the magnetization reversal process measured by the planar Hall effect. Minor loop scan reveals the presence of FM IEC between Fe and GaMnAs, which systematically decreases as the temperature increases.",

keywords = "Ferromagnetic (fm) films, Interlayer exchange coupling (iec), Magnetic anisotropy, Planar hall effect",

author = "Kritsanu Tivakornsasithorn and Sangyeop Lee and Bac, {Seul Ki} and Seonghoon Choi and Sanghoon Lee and Xinyu Liu and Margaret Dobrowolska and Furdyna, {Jacek K.}",

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AU - Tivakornsasithorn, Kritsanu

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AU - Bac, Seul Ki

AU - Choi, Seonghoon

AU - Lee, Sanghoon

AU - Liu, Xinyu

AU - Dobrowolska, Margaret

AU - Furdyna, Jacek K.

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N2 - Interlayer exchange coupling (IEC) between ferromagnetic (FM) metal Fe and FM semiconductor GaMnAs has been investigated by using magnetotransport measurements. The realization of diverse magnetization alignments, including collinear and non-collinear configurations, between Fe and GaMnAs layers are observed during the magnetization reversal process measured by the planar Hall effect. Minor loop scan reveals the presence of FM IEC between Fe and GaMnAs, which systematically decreases as the temperature increases.

AB - Interlayer exchange coupling (IEC) between ferromagnetic (FM) metal Fe and FM semiconductor GaMnAs has been investigated by using magnetotransport measurements. The realization of diverse magnetization alignments, including collinear and non-collinear configurations, between Fe and GaMnAs layers are observed during the magnetization reversal process measured by the planar Hall effect. Minor loop scan reveals the presence of FM IEC between Fe and GaMnAs, which systematically decreases as the temperature increases.

KW - Ferromagnetic (fm) films

KW - Interlayer exchange coupling (iec)

KW - Magnetic anisotropy

KW - Planar hall effect

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Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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