Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Phunvira Chongthanaphisut; Seul Ki Bac; Seonghoon Choi; Kyung Jae Lee; Jihoon Chang; Suho Choi; Sanghoon Lee; Moses Nnaji; X. Liu; M. Dobrowolska; J. K. Furdyna

doi:10.1038/s41598-019-41138-9

Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Phunvira Chongthanaphisut, Seul Ki Bac, Seonghoon Choi, Kyung Jae Lee, Jihoon Chang, Suho Choi, Sanghoon Lee, Moses Nnaji, X. Liu, M. Dobrowolska, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.

Original language	English
Article number	4740
Journal	Scientific reports
Volume	9
Issue number	1
DOIs	https://doi.org/10.1038/s41598-019-41138-9
Publication status	Published - 2019 Dec 1

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© 2019, The Author(s).

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Cite this

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title = "Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy",

abstract = "We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.",

author = "Phunvira Chongthanaphisut and Bac, {Seul Ki} and Seonghoon Choi and Lee, {Kyung Jae} and Jihoon Chang and Suho Choi and Sanghoon Lee and Moses Nnaji and X. Liu and M. Dobrowolska and Furdyna, {J. K.}",

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doi = "10.1038/s41598-019-41138-9",

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T1 - Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

AU - Chongthanaphisut, Phunvira

AU - Bac, Seul Ki

AU - Choi, Seonghoon

AU - Lee, Kyung Jae

AU - Chang, Jihoon

AU - Choi, Suho

AU - Lee, Sanghoon

AU - Nnaji, Moses

AU - Liu, X.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

PY - 2019/12/1

Y1 - 2019/12/1

N2 - We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.

AB - We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.

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Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Abstract

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