Abstract
We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.
Original language | English |
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Article number | 4740 |
Journal | Scientific reports |
Volume | 9 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2019 Dec 1 |
Bibliographical note
Publisher Copyright:© 2019, The Author(s).
ASJC Scopus subject areas
- General