Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Phunvira Chongthanaphisut; Seul Ki Bac; Seonghoon Choi; Kyung Jae Lee; Jihoon Chang; Suho Choi; Sanghoon Lee; Moses Nnaji; X. Liu; M. Dobrowolska; J. K. Furdyna

doi:10.1038/s41598-019-41138-9

Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Phunvira Chongthanaphisut
, Seul Ki Bac
, Seonghoon Choi
, Kyung Jae Lee
, Jihoon Chang
, Suho Choi
, Sanghoon Lee^*
, Moses Nnaji
, X. Liu
, M. Dobrowolska
, J. K. Furdyna

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.

Original language	English
Article number	4740
Journal	Scientific reports
Volume	9
Issue number	1
DOIs	https://doi.org/10.1038/s41598-019-41138-9
Publication status	Published - 2019 Dec 1

Bibliographical note

Publisher Copyright:
© 2019, The Author(s).

ASJC Scopus subject areas

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Cite this

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title = "Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy",

abstract = "We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.",

author = "Phunvira Chongthanaphisut and Bac, \{Seul Ki\} and Seonghoon Choi and Lee, \{Kyung Jae\} and Jihoon Chang and Suho Choi and Sanghoon Lee and Moses Nnaji and X. Liu and M. Dobrowolska and Furdyna, \{J. K.\}",

note = "Publisher Copyright: {\textcopyright} 2019, The Author(s).",

year = "2019",

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doi = "10.1038/s41598-019-41138-9",

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TY - JOUR

T1 - Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

AU - Chongthanaphisut, Phunvira

AU - Bac, Seul Ki

AU - Choi, Seonghoon

AU - Lee, Kyung Jae

AU - Chang, Jihoon

AU - Choi, Suho

AU - Lee, Sanghoon

AU - Nnaji, Moses

AU - Liu, X.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

PY - 2019/12/1

Y1 - 2019/12/1

N2 - We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.

AB - We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.

UR - https://www.scopus.com/pages/publications/85063324186

U2 - 10.1038/s41598-019-41138-9

DO - 10.1038/s41598-019-41138-9

M3 - Article

C2 - 30894576

AN - SCOPUS:85063324186

SN - 2045-2322

VL - 9

JO - Scientific reports

JF - Scientific reports

IS - 1

M1 - 4740

ER -

Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Abstract

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