TY - JOUR
T1 - Interlayer exchange coupling in MBE-grown GaMnAs-based multilayer systems
AU - Lee, Hakjoon
AU - Lee, Sangyeop
AU - Choi, Seonghoon
AU - Bac, Seul Ki
AU - Lee, Sanghoon
AU - Li, Xiang
AU - Liu, Xinyu
AU - Dobrowolska, M.
AU - Furdyna, Jacek K.
N1 - Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01056614); by Korea University through a grant; and by the National Science Foundation Grant DMR 1400432.
Publisher Copyright:
© 2017
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Interlayer exchange coupling (IEC) of GaMnAs-based multilayers has been investigated by varying the structural parameters, such as spacer thickness, carrier doping in the nonmagnetic layers, and repetition number of GaMnAs/GaAs bilayers. The type of IEC in the structure (i.e., either ferromagnetic or antiferromagnetic IEC) was identified from the magnetotransport measurements, which show either anisotropic magnetoresistance or giant magnetoresistance-like behavior. The investigation revealed that the parameters of the ferromagnetic GaMnAs layer (i.e., Mn composition and thickness) are less important than those of the non-magnetic GaAs spacer layer in the structure. In particular, it was found that the presence of carriers in the spacer layer plays a crucial role in determining the type and strength of the IEC in GaMnAs-based multilayer systems.
AB - Interlayer exchange coupling (IEC) of GaMnAs-based multilayers has been investigated by varying the structural parameters, such as spacer thickness, carrier doping in the nonmagnetic layers, and repetition number of GaMnAs/GaAs bilayers. The type of IEC in the structure (i.e., either ferromagnetic or antiferromagnetic IEC) was identified from the magnetotransport measurements, which show either anisotropic magnetoresistance or giant magnetoresistance-like behavior. The investigation revealed that the parameters of the ferromagnetic GaMnAs layer (i.e., Mn composition and thickness) are less important than those of the non-magnetic GaAs spacer layer in the structure. In particular, it was found that the presence of carriers in the spacer layer plays a crucial role in determining the type and strength of the IEC in GaMnAs-based multilayer systems.
KW - A1. Characterization
KW - A3. Molecular beam epitaxy
KW - A3. Superlattices
KW - B2. Semiconducting III–V materials
UR - http://www.scopus.com/inward/record.url?scp=85012878757&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2017.01.039
DO - 10.1016/j.jcrysgro.2017.01.039
M3 - Article
AN - SCOPUS:85012878757
SN - 0022-0248
VL - 477
SP - 188
EP - 192
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -