Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory

D. H. Lee; S. H. Lim

doi:10.1109/NMDC.2006.4388928

Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory

D. H. Lee, S. H. Lim

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A commercial program package based on finite element method (COMSOL) is used to calculate magnetic field intensity resulting from the free poles formed at the magnetic cell edges. The magnetic cell stack and dimensions are relevant to high density magnetic random access memory applications. The calculated field intensity is found to be large, indicating the importance of considering magnetostatic interactions in device applications.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	612-613
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388928
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

Keywords

Finite element method calculation
Magnetic random access memo
Magnetic tunnel junctions
Magnetostatic interactions

ASJC Scopus subject areas

Electrical and Electronic Engineering
Materials Science(all)

Access to Document

10.1109/NMDC.2006.4388928

Cite this

Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory. / Lee, D. H.; Lim, S. H.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 612-613 4388928 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, DH & Lim, SH 2006, Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388928, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 612-613, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388928

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AB - A commercial program package based on finite element method (COMSOL) is used to calculate magnetic field intensity resulting from the free poles formed at the magnetic cell edges. The magnetic cell stack and dimensions are relevant to high density magnetic random access memory applications. The calculated field intensity is found to be large, indicating the importance of considering magnetostatic interactions in device applications.

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KW - Magnetic random access memo

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KW - Magnetostatic interactions

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Y2 - 22 October 2006 through 25 October 2006

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Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory

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Keywords

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