Inversion behavior in Sc2O3/GaN gated diodes

Jihyun Kim; R. Mehandru; B. Luo; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; Y. Irokawa

doi:10.1063/1.1492852

Inversion behavior in Sc₂O₃/GaN gated diodes

Jihyun Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Y. Irokawa

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The capacitance-voltage (C-V) characteristics of Sc₂O ₃/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain-voltage dependence of the C-V curves, the total surface state density was estimated to be ∼8.2×10 ¹²cm^-2 for diodes undergoing an implant activation anneal at 950°C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc₂O₃ and GaN. The Si-implanted n⁺ regions in the gated diode structure are effective in providing a source of inversion charge.

Original language	English
Pages (from-to)	373-375
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	2
DOIs	https://doi.org/10.1063/1.1492852
Publication status	Published - 2002 Jul 8
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Inversion behavior in Sc2O3/GaN gated diodes",

abstract = "The capacitance-voltage (C-V) characteristics of Sc2O 3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain-voltage dependence of the C-V curves, the total surface state density was estimated to be ∼8.2×10 12cm-2 for diodes undergoing an implant activation anneal at 950°C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc2O3 and GaN. The Si-implanted n+ regions in the gated diode structure are effective in providing a source of inversion charge.",

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AU - Kim, Jihyun

AU - Mehandru, R.

AU - Luo, B.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Irokawa, Y.

PY - 2002/7/8

Y1 - 2002/7/8

N2 - The capacitance-voltage (C-V) characteristics of Sc2O 3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain-voltage dependence of the C-V curves, the total surface state density was estimated to be ∼8.2×10 12cm-2 for diodes undergoing an implant activation anneal at 950°C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc2O3 and GaN. The Si-implanted n+ regions in the gated diode structure are effective in providing a source of inversion charge.

AB - The capacitance-voltage (C-V) characteristics of Sc2O 3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain-voltage dependence of the C-V curves, the total surface state density was estimated to be ∼8.2×10 12cm-2 for diodes undergoing an implant activation anneal at 950°C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc2O3 and GaN. The Si-implanted n+ regions in the gated diode structure are effective in providing a source of inversion charge.

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Inversion behavior in Sc₂O₃/GaN gated diodes

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