Abstract
The capacitance-voltage (C-V) characteristics of Sc2O 3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain-voltage dependence of the C-V curves, the total surface state density was estimated to be ∼8.2×10 12cm-2 for diodes undergoing an implant activation anneal at 950°C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc2O3 and GaN. The Si-implanted n+ regions in the gated diode structure are effective in providing a source of inversion charge.
Original language | English |
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Pages (from-to) | 373-375 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2002 Jul 8 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)