We investigated the electrical, optical, and structural properties of Al-doped ZnO (AZO)/Ag/AZO and indium gallium zinc oxide (IGZO)/Ag/IGZO multilayer films, and the performance of inverted organic solar cells (OSCs) fabricated with Sn-doped indium oxide (ITO), AZO/Ag/AZO, and IGZO/Ag/IGZO electrodes. Even though deposited at room temperature, AZO/Ag/AZO (36 nm/19 nm/36 nm) and IGZO/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films showed sheet resistances of 4.1 and 4.2 Ω/sq, resistivities of 3.3 × 10−5 and 4.1 × 10−5 Ω cm, and transmittances of 93 and 88% at 550 nm, respectively. Figures of merit (FOMs) were obtained to be 99.9 and 49.9 × 10−3 Ω−1 for the AZO/Ag/AZO and IGZO/Ag/IGZO films, respectively. Inverted OSCs fabricated using the as-deposited AZO/Ag/AZO and IGZO/Ag/IGZO electrodes produced power conversion efficiencies (PCEs) of 2.4 and 2.6%, respectively, while that with high-temperature annealed ITO electrode gave a PCE of 3.2%.
Bibliographical noteFunding Information:
This work was supported by the Korea Evaluation Institute of Industrial Technology (Grant No.10049601: Development of output coupling conductive substrate with light extraction efficiency up to 1.0 times) and the World Class 300 project (Grant No. S2317456) through Korea Institute for Advancement of Technology (KIAT), which is funded by the Small and Medium Business Administration.
© 2017 Korean Chemical Society, Seoul & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
- Al-doped ZnO
- Indium gallium zinc oxide
- Inverted organic solar cells
- Transparent electrodes
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