Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes

Doo Hyeb Youn; Sung Jin Son; Young Ju Lee; Soon Won Hwang; Jung Ja Yang; Kang Jae Lee; Jong Hi Kim; Jang Yeon Jo; Ji Beom Yoo; Chul Jong Choi; Tae Yeon Seong

doi:10.1143/jjap.39.2512

Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes

Doo Hyeb Youn, Sung Jin Son, Young Ju Lee, Soon Won Hwang, Jung Ja Yang, Kang Jae Lee, Jong Hi Kim, Jang Yeon Jo, Ji Beom Yoo, Chul Jong Choi, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The role of two-step low-temperature GaN (LT-GaN) layers was investigated by cathodoluminescence, high resolution double crystal X-ray diffraction, transmission electron microscopy, atomic force microscopy, and current-voltage measurements. It was shown that the introduction of the LT-GaN layer prevents In from evaporating from InGaN during the high-temperature growth of p-GaN. The trasmission electron microscopic (TEM) results showed that the LT-GaN hampers dislocation propagation from the InGaN active layer into the p-GaN, leading to reduction in the dislocation density in the p-GaN. The use of the two-step LT-GaN resulted in an increase in the output power of light-emitting diodes and a decrease in the operating forward voltage.

Original language	English
Pages (from-to)	2512-2515
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.39.2512
Publication status	Published - 2000 May 1
Externally published	Yes

Keywords

Cathodoluminescence
Defects
GaN
InGaN
Low-temperature GaN
Transmission electron microscopy

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.39.2512

Cite this

Youn, D. H., Son, S. J., Lee, Y. J., Hwang, S. W., Yang, J. J., Lee, K. J., Kim, J. H., Jo, J. Y., Yoo, J. B., Choi, C. J., & Seong, T. Y. (2000). Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(5 A), 2512-2515. https://doi.org/10.1143/jjap.39.2512

Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes. / Youn, Doo Hyeb; Son, Sung Jin; Lee, Young Ju et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 5 A, 01.05.2000, p. 2512-2515.

Research output: Contribution to journal › Article › peer-review

Youn, DH, Son, SJ, Lee, YJ, Hwang, SW, Yang, JJ, Lee, KJ, Kim, JH, Jo, JY, Yoo, JB, Choi, CJ & Seong, TY 2000, 'Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 39, no. 5 A, pp. 2512-2515. https://doi.org/10.1143/jjap.39.2512

@article{d835f297112749c4b72e11a4d96fea20,

title = "Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes",

abstract = "The role of two-step low-temperature GaN (LT-GaN) layers was investigated by cathodoluminescence, high resolution double crystal X-ray diffraction, transmission electron microscopy, atomic force microscopy, and current-voltage measurements. It was shown that the introduction of the LT-GaN layer prevents In from evaporating from InGaN during the high-temperature growth of p-GaN. The trasmission electron microscopic (TEM) results showed that the LT-GaN hampers dislocation propagation from the InGaN active layer into the p-GaN, leading to reduction in the dislocation density in the p-GaN. The use of the two-step LT-GaN resulted in an increase in the output power of light-emitting diodes and a decrease in the operating forward voltage.",

keywords = "Cathodoluminescence, Defects, GaN, InGaN, Low-temperature GaN, Transmission electron microscopy",

author = "Youn, {Doo Hyeb} and Son, {Sung Jin} and Lee, {Young Ju} and Hwang, {Soon Won} and Yang, {Jung Ja} and Lee, {Kang Jae} and Kim, {Jong Hi} and Jo, {Jang Yeon} and Yoo, {Ji Beom} and Choi, {Chul Jong} and Seong, {Tae Yeon}",

year = "2000",

month = may,

day = "1",

doi = "10.1143/jjap.39.2512",

language = "English",

volume = "39",

pages = "2512--2515",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5 A",

}

TY - JOUR

T1 - Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes

AU - Youn, Doo Hyeb

AU - Son, Sung Jin

AU - Lee, Young Ju

AU - Hwang, Soon Won

AU - Yang, Jung Ja

AU - Lee, Kang Jae

AU - Kim, Jong Hi

AU - Jo, Jang Yeon

AU - Yoo, Ji Beom

AU - Choi, Chul Jong

AU - Seong, Tae Yeon

PY - 2000/5/1

Y1 - 2000/5/1

N2 - The role of two-step low-temperature GaN (LT-GaN) layers was investigated by cathodoluminescence, high resolution double crystal X-ray diffraction, transmission electron microscopy, atomic force microscopy, and current-voltage measurements. It was shown that the introduction of the LT-GaN layer prevents In from evaporating from InGaN during the high-temperature growth of p-GaN. The trasmission electron microscopic (TEM) results showed that the LT-GaN hampers dislocation propagation from the InGaN active layer into the p-GaN, leading to reduction in the dislocation density in the p-GaN. The use of the two-step LT-GaN resulted in an increase in the output power of light-emitting diodes and a decrease in the operating forward voltage.

AB - The role of two-step low-temperature GaN (LT-GaN) layers was investigated by cathodoluminescence, high resolution double crystal X-ray diffraction, transmission electron microscopy, atomic force microscopy, and current-voltage measurements. It was shown that the introduction of the LT-GaN layer prevents In from evaporating from InGaN during the high-temperature growth of p-GaN. The trasmission electron microscopic (TEM) results showed that the LT-GaN hampers dislocation propagation from the InGaN active layer into the p-GaN, leading to reduction in the dislocation density in the p-GaN. The use of the two-step LT-GaN resulted in an increase in the output power of light-emitting diodes and a decrease in the operating forward voltage.

KW - Cathodoluminescence

KW - Defects

KW - GaN

KW - InGaN

KW - Low-temperature GaN

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=0033723429&partnerID=8YFLogxK

U2 - 10.1143/jjap.39.2512

DO - 10.1143/jjap.39.2512

M3 - Article

AN - SCOPUS:0033723429

SN - 0021-4922

VL - 39

SP - 2512

EP - 2515

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 5 A

ER -

Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this