Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

Yujin Seo; Choong Ki Kim; Tae In Lee; Wan Sik Hwang; Hyun Yong Yu; Yang Kyu Choi; Byung Jin Cho

doi:10.1109/TED.2017.2741496

Investigation of Border Trap Characteristics in the AlON/GeO₂/Ge Gate Stacks

Yujin Seo, Choong Ki Kim, Tae In Lee, Wan Sik Hwang, Hyun Yong Yu, Yang Kyu Choi, Byung Jin Cho

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO₂/Ge gate-stack are discussed in detail and compared with those in the Al₂O₃/GeO₂/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al₂O₃ in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al₂O₃ gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.

Original language	English
Article number	8019845
Pages (from-to)	3998-4001
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	10
DOIs	https://doi.org/10.1109/TED.2017.2741496
Publication status	Published - 2017 Oct

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Aluminum oxynitride (AlON)
border trap
germanium
germanium oxide (GeO)
low-frequency noise (LFN)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2017.2741496

Cite this

@article{6aade60692964a04be71e8cae821395d,

title = "Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks",

abstract = "Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.",

keywords = "Aluminum oxynitride (AlON), border trap, germanium, germanium oxide (GeO), low-frequency noise (LFN)",

author = "Yujin Seo and Kim, {Choong Ki} and Lee, {Tae In} and Hwang, {Wan Sik} and Yu, {Hyun Yong} and Choi, {Yang Kyu} and Cho, {Byung Jin}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2017",

month = oct,

doi = "10.1109/TED.2017.2741496",

language = "English",

volume = "64",

pages = "3998--4001",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

AU - Seo, Yujin

AU - Kim, Choong Ki

AU - Lee, Tae In

AU - Hwang, Wan Sik

AU - Yu, Hyun Yong

AU - Choi, Yang Kyu

AU - Cho, Byung Jin

PY - 2017/10

Y1 - 2017/10

N2 - Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.

AB - Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.

KW - Aluminum oxynitride (AlON)

KW - border trap

KW - germanium

KW - germanium oxide (GeO)

KW - low-frequency noise (LFN)

UR - http://www.scopus.com/inward/record.url?scp=85028708902&partnerID=8YFLogxK

U2 - 10.1109/TED.2017.2741496

DO - 10.1109/TED.2017.2741496

M3 - Article

AN - SCOPUS:85028708902

SN - 0018-9383

VL - 64

SP - 3998

EP - 4001

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

M1 - 8019845

ER -