Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.
Bibliographical noteFunding Information:
Manuscript received April 27, 2017; revised July 14, 2017; accepted August 14, 2017. Date of publication August 29, 2017; date of current version September 20, 2017. This work was supported by the Industrial Strategic Technology Development Program (Technology Development of Ge nMOS/pMOS FinFET for 10 nm Technology Node) funded by the Ministry of Trade, Industry and Energy (MI, Korea) under Grant 10048594. The review of this paper was arranged by Editor D. Esseni. (Corresponding author: Byung Jin Cho.) Y. Seo, C.-K. Kim, T.-I. Lee, Y.-K. Choi, and B. J. Cho are with the School of Electrical Engineering, KAIST, Daejeon 305-701, South Korea (e-mail: email@example.com).
© 1963-2012 IEEE.
- Aluminum oxynitride (AlON)
- border trap
- germanium oxide (GeO)
- low-frequency noise (LFN)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering