Abstract
Cadmium manganese telluride (CMT) has high potential as a material for room-temperature nuclear-radiation detectors. We investigated indium-doped CMT crystals taken from the stable growth region of the ingot and compared its characteristics with that from the last-to-freeze region. We employed different techniques, including synchrotron white-beam x-ray topography (SWBXT), current-voltage (I-V) measurement, and low-temperature photoluminescence spectra, and we also assessed their responses as detectors of radiation exposure. The crystal from the stable growth region proved to be superior to that from the last-to-freeze region; it is a single-grain crystal, free of twins, and displayed a resistivity higher by one order of magnitude. The segregation of indium dopant in the ingot might be responsible for its better resistivity. Furthermore, we recorded a good response in the detector fabricated from the crystal taken from the stable growth region; its (μτ) e value was 6 × 10 -3 cm 2/V, which is acceptable for thin detectors, including their application in medicine.
Original language | English |
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Pages (from-to) | 1053-1057 |
Number of pages | 5 |
Journal | Journal of Electronic Materials |
Volume | 39 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2010 Jul |
Externally published | Yes |
Keywords
- CMT
- Detector response
- Photoluminescence spectra
- Synchrotron white-beam x-ray topography
- Twins
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry