Investigation of Cu metallization for Si solar cells

Jinmo Kang; Jae Sung You; Choon Sik Kang; James Jungho Pak; Donghwan Kim

doi:10.1016/S0927-0248(02)00052-1

Investigation of Cu metallization for Si solar cells

Jinmo Kang, Jae Sung You, Choon Sik Kang, James Jungho Pak, Donghwan Kim

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

For application of copper metallization to silicon solar cells, electrical resistivity of the electroplated Cu was investigated for different annealing conditions: the rapid thermal annealing (RTA) and the vacuum annealing at various temperatures. The characteristics of Ti as the diffusion barrier were also observed. The specific contact resistance between Si and Ti/Cu was measured using Kelvin test pattern. For 8-min electroplated sample, the lowest resistivity of 2.1 μΩcm was obtained at 300°C RTA condition. For Cu with Ti barrier, 400°C 2 min vacuum-annealed sample showed etch pits whereas 400°C RTA showed no etch pits. A vacuum annealing at 450°C for 30 min reduced the specific contact resistance to 7.2 × 10^-6 Ωcm².

Original language	English
Pages (from-to)	91-96
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	74
Issue number	1-4
DOIs	https://doi.org/10.1016/S0927-0248(02)00052-1
Publication status	Published - 2002 Oct

Keywords

Contact resistance
Cu metallization
Etch pits
High efficiency
Silicon
Solar cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/S0927-0248(02)00052-1

Cite this

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title = "Investigation of Cu metallization for Si solar cells",

abstract = "For application of copper metallization to silicon solar cells, electrical resistivity of the electroplated Cu was investigated for different annealing conditions: the rapid thermal annealing (RTA) and the vacuum annealing at various temperatures. The characteristics of Ti as the diffusion barrier were also observed. The specific contact resistance between Si and Ti/Cu was measured using Kelvin test pattern. For 8-min electroplated sample, the lowest resistivity of 2.1 μΩcm was obtained at 300°C RTA condition. For Cu with Ti barrier, 400°C 2 min vacuum-annealed sample showed etch pits whereas 400°C RTA showed no etch pits. A vacuum annealing at 450°C for 30 min reduced the specific contact resistance to 7.2 × 10-6 Ωcm2.",

keywords = "Contact resistance, Cu metallization, Etch pits, High efficiency, Silicon, Solar cells",

author = "Jinmo Kang and You, {Jae Sung} and Kang, {Choon Sik} and Pak, {James Jungho} and Donghwan Kim",

year = "2002",

month = oct,

doi = "10.1016/S0927-0248(02)00052-1",

language = "English",

volume = "74",

pages = "91--96",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Investigation of Cu metallization for Si solar cells

AU - Kang, Jinmo

AU - You, Jae Sung

AU - Kang, Choon Sik

AU - Pak, James Jungho

AU - Kim, Donghwan

PY - 2002/10

Y1 - 2002/10

N2 - For application of copper metallization to silicon solar cells, electrical resistivity of the electroplated Cu was investigated for different annealing conditions: the rapid thermal annealing (RTA) and the vacuum annealing at various temperatures. The characteristics of Ti as the diffusion barrier were also observed. The specific contact resistance between Si and Ti/Cu was measured using Kelvin test pattern. For 8-min electroplated sample, the lowest resistivity of 2.1 μΩcm was obtained at 300°C RTA condition. For Cu with Ti barrier, 400°C 2 min vacuum-annealed sample showed etch pits whereas 400°C RTA showed no etch pits. A vacuum annealing at 450°C for 30 min reduced the specific contact resistance to 7.2 × 10-6 Ωcm2.

AB - For application of copper metallization to silicon solar cells, electrical resistivity of the electroplated Cu was investigated for different annealing conditions: the rapid thermal annealing (RTA) and the vacuum annealing at various temperatures. The characteristics of Ti as the diffusion barrier were also observed. The specific contact resistance between Si and Ti/Cu was measured using Kelvin test pattern. For 8-min electroplated sample, the lowest resistivity of 2.1 μΩcm was obtained at 300°C RTA condition. For Cu with Ti barrier, 400°C 2 min vacuum-annealed sample showed etch pits whereas 400°C RTA showed no etch pits. A vacuum annealing at 450°C for 30 min reduced the specific contact resistance to 7.2 × 10-6 Ωcm2.

KW - Contact resistance

KW - Cu metallization

KW - Etch pits

KW - High efficiency

KW - Silicon

KW - Solar cells

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U2 - 10.1016/S0927-0248(02)00052-1

DO - 10.1016/S0927-0248(02)00052-1

M3 - Article

AN - SCOPUS:0036778403

SN - 0927-0248

VL - 74

SP - 91

EP - 96

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 1-4

ER -

Investigation of Cu metallization for Si solar cells

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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