This study evaluated the impact of partial shading on CuInxGa(1-x)Se2 (CIGS) photovoltaic (PV) modules equipped with bypass diodes. When the CIGS PV modules were partially shaded, they were subjected to partial reverse bias, leading to the formation of hotspots and a possible occurrence of junction damage. In a module with a cadmium sulfide buffer layer, hotspots and wormlike defects were formed. The hotspots were formed as soon as the modules were shaded; the hotspots caused permanent damage (wormlike defects) in the CIGS module. Specifically, the wormlike defects were caused by the window layer, leading to increased recombination and decay of the solar cell properties. However, a CIGS module with a zinc sulfide buffer layer did not exhibit the formation of hotspots or any visual damage. The reverse bias breakdown voltage of the CIGS PV module with the cadmium sulfide buffer layer was higher than that of the CIGS PV module with the zinc sulfide buffer layer.
|Number of pages||9|
|Journal||Progress in Photovoltaics: Research and Applications|
|Publication status||Published - 2016 Aug 1|
Bibliographical notePublisher Copyright:
Copyright © 2016 John Wiley & Sons, Ltd.
- Cu(In,Ga)Se module
- bypass diode
- partial shading
- wormlike defect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Condensed Matter Physics
- Electrical and Electronic Engineering