Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect

Jungtaek Kim; Sangyeop Lee; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1016/j.ssc.2009.10.014

Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect

Jungtaek Kim, Sangyeop Lee, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The dependence of the planar Hall effect (PHE) in ferromagnetic GaMnAs films on the direction of the applied magnetic field was used to determine domain pinning fields in this material. The investigation was carried out by measuring the effect of reorientation of magnetization from one easy axis to another on the value of PHE as the magnetic field of fixed strength was rotated over 360^{{ring operator}}. This process was repeated at several field strengths, and the PHE results were analyzed using Cowburn's model of magnetic free energy, from which domain pinning fields of Δ E_{[over(1, ̄) 10]} / M = 27.5 ± 0.3 Oe and Δ E_{[over(1, ̄) over(1, ̄) 0]} / M = 38.0 ± 0.7 Oe were obtained for the Ga_0.94Mn_0.06As film used in this study. These values of pinning fields agree with those obtained in earlier studies where the magnetization reversal was investigated by sweeping the magnetic field. We show that the present approach of rotating a fixed field provides a simpler and more elegant way for studying domain pinning fields in a ferromagnetic film.

Original language	English
Pages (from-to)	27-29
Number of pages	3
Journal	Solid State Communications
Volume	150
Issue number	1-2
DOIs	https://doi.org/10.1016/j.ssc.2009.10.014
Publication status	Published - 2010 Jan

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0071795); by the Seoul R&DB Program (01543); and by the National Science Foundation Grant DMR06-03762.

Keywords

A. Ferromagnetism
A. Semiconductor
D. Anisotropy
E. Planar Hall effect

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2009.10.014

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title = "Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect",

abstract = "The dependence of the planar Hall effect (PHE) in ferromagnetic GaMnAs films on the direction of the applied magnetic field was used to determine domain pinning fields in this material. The investigation was carried out by measuring the effect of reorientation of magnetization from one easy axis to another on the value of PHE as the magnetic field of fixed strength was rotated over 360{ring operator}. This process was repeated at several field strengths, and the PHE results were analyzed using Cowburn's model of magnetic free energy, from which domain pinning fields of Δ E[over(1,{\= }) 10] / M = 27.5 ± 0.3 Oe and Δ E[over(1,{\= }) over(1,{\= }) 0] / M = 38.0 ± 0.7 Oe were obtained for the Ga0.94Mn0.06As film used in this study. These values of pinning fields agree with those obtained in earlier studies where the magnetization reversal was investigated by sweeping the magnetic field. We show that the present approach of rotating a fixed field provides a simpler and more elegant way for studying domain pinning fields in a ferromagnetic film.",

keywords = "A. Ferromagnetism, A. Semiconductor, D. Anisotropy, E. Planar Hall effect",

author = "Jungtaek Kim and Sangyeop Lee and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0071795); by the Seoul R&DB Program (01543); and by the National Science Foundation Grant DMR06-03762.",

year = "2010",

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doi = "10.1016/j.ssc.2009.10.014",

language = "English",

volume = "150",

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journal = "Solid State Communications",

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T1 - Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect

AU - Kim, Jungtaek

AU - Lee, Sangyeop

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0071795); by the Seoul R&DB Program (01543); and by the National Science Foundation Grant DMR06-03762.

PY - 2010/1

Y1 - 2010/1

N2 - The dependence of the planar Hall effect (PHE) in ferromagnetic GaMnAs films on the direction of the applied magnetic field was used to determine domain pinning fields in this material. The investigation was carried out by measuring the effect of reorientation of magnetization from one easy axis to another on the value of PHE as the magnetic field of fixed strength was rotated over 360{ring operator}. This process was repeated at several field strengths, and the PHE results were analyzed using Cowburn's model of magnetic free energy, from which domain pinning fields of Δ E[over(1, ̄) 10] / M = 27.5 ± 0.3 Oe and Δ E[over(1, ̄) over(1, ̄) 0] / M = 38.0 ± 0.7 Oe were obtained for the Ga0.94Mn0.06As film used in this study. These values of pinning fields agree with those obtained in earlier studies where the magnetization reversal was investigated by sweeping the magnetic field. We show that the present approach of rotating a fixed field provides a simpler and more elegant way for studying domain pinning fields in a ferromagnetic film.

AB - The dependence of the planar Hall effect (PHE) in ferromagnetic GaMnAs films on the direction of the applied magnetic field was used to determine domain pinning fields in this material. The investigation was carried out by measuring the effect of reorientation of magnetization from one easy axis to another on the value of PHE as the magnetic field of fixed strength was rotated over 360{ring operator}. This process was repeated at several field strengths, and the PHE results were analyzed using Cowburn's model of magnetic free energy, from which domain pinning fields of Δ E[over(1, ̄) 10] / M = 27.5 ± 0.3 Oe and Δ E[over(1, ̄) over(1, ̄) 0] / M = 38.0 ± 0.7 Oe were obtained for the Ga0.94Mn0.06As film used in this study. These values of pinning fields agree with those obtained in earlier studies where the magnetization reversal was investigated by sweeping the magnetic field. We show that the present approach of rotating a fixed field provides a simpler and more elegant way for studying domain pinning fields in a ferromagnetic film.

KW - A. Ferromagnetism

KW - A. Semiconductor

KW - D. Anisotropy

KW - E. Planar Hall effect

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Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect

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Bibliographical note

Keywords

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