Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect

Jungtaek Kim, Sangyeop Lee, Sanghoon Lee, X. Liu, J. K. Furdyna

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11 Citations (Scopus)


The dependence of the planar Hall effect (PHE) in ferromagnetic GaMnAs films on the direction of the applied magnetic field was used to determine domain pinning fields in this material. The investigation was carried out by measuring the effect of reorientation of magnetization from one easy axis to another on the value of PHE as the magnetic field of fixed strength was rotated over 360{ring operator}. This process was repeated at several field strengths, and the PHE results were analyzed using Cowburn's model of magnetic free energy, from which domain pinning fields of Δ E[over(1, ̄) 10] / M = 27.5 ± 0.3 Oe and Δ E[over(1, ̄) over(1, ̄) 0] / M = 38.0 ± 0.7 Oe were obtained for the Ga0.94Mn0.06As film used in this study. These values of pinning fields agree with those obtained in earlier studies where the magnetization reversal was investigated by sweeping the magnetic field. We show that the present approach of rotating a fixed field provides a simpler and more elegant way for studying domain pinning fields in a ferromagnetic film.

Original languageEnglish
Pages (from-to)27-29
Number of pages3
JournalSolid State Communications
Issue number1-2
Publication statusPublished - 2010 Jan

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0071795); by the Seoul R&DB Program (01543); and by the National Science Foundation Grant DMR06-03762.


  • A. Ferromagnetism
  • A. Semiconductor
  • D. Anisotropy
  • E. Planar Hall effect

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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