Investigation of interfacial reaction of Ni on epitaxial Si1-xGex (001)layers

Y. W. Ok, S. H. Kim, Y. J. Song, K. H. Shim, T. Y. Seong

Research output: Chapter in Book/Report/Conference proceedingChapter


We investigate the interfacial reaction of Ni on Si1-xGex (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800 °C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800 °C. The N1 germanosilicide layers start to agglomerate at temperatures above 600 °C and become discontinuous at 800 °C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.

Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials 2003
PublisherCRC Press
Number of pages4
ISBN (Electronic)9781351083089
ISBN (Print)0750309792, 9781315895536
Publication statusPublished - 2018 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)


Dive into the research topics of 'Investigation of interfacial reaction of Ni on epitaxial Si1-xGex (001)layers'. Together they form a unique fingerprint.

Cite this