Investigation of interfacial reaction of Ni on epitaxial Si1-xGex (001)layers

Y. W. Ok; S. H. Kim; Y. J. Song; K. H. Shim; T. Y. Seong

doi:10.1201/9781351074636-107

Investigation of interfacial reaction of Ni on epitaxial Si_1-xGe_x (001)layers

Y. W. Ok, S. H. Kim, Y. J. Song, K. H. Shim, T. Y. Seong

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

We investigate the interfacial reaction of Ni on Si_1-xGe_x (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800 °C. Glancing X-ray diffraction results show that for the reactions of Ni on Si_1-xGe_x (x=0.1, 0.2), only Ni germanosilicide [Ni(Si_1-yGe_y)] phase is observed when annealed at temperatures in the range of 300-800 °C. The N1 germanosilicide layers start to agglomerate at temperatures above 600 °C and become discontinuous at 800 °C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials 2003
Publisher	CRC Press
Pages	467-470
Number of pages	4
ISBN (Electronic)	9781351083089
ISBN (Print)	0750309792, 9781315895536
DOIs	https://doi.org/10.1201/9781351074636-107
Publication status	Published - 2018 Jan 1
Externally published	Yes

ASJC Scopus subject areas

General Engineering

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title = "Investigation of interfacial reaction of Ni on epitaxial Si1-xGex (001)layers",

abstract = "We investigate the interfacial reaction of Ni on Si1-xGex (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800 °C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800 °C. The N1 germanosilicide layers start to agglomerate at temperatures above 600 °C and become discontinuous at 800 °C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.",

author = "Ok, {Y. W.} and Kim, {S. H.} and Song, {Y. J.} and Shim, {K. H.} and Seong, {T. Y.}",

year = "2018",

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doi = "10.1201/9781351074636-107",

language = "English",

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T1 - Investigation of interfacial reaction of Ni on epitaxial Si1-xGex (001)layers

AU - Ok, Y. W.

AU - Kim, S. H.

AU - Song, Y. J.

AU - Shim, K. H.

AU - Seong, T. Y.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We investigate the interfacial reaction of Ni on Si1-xGex (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800 °C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800 °C. The N1 germanosilicide layers start to agglomerate at temperatures above 600 °C and become discontinuous at 800 °C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.

AB - We investigate the interfacial reaction of Ni on Si1-xGex (x = 0.0-0.2) epitaxial (001) layers as a function of annealing temperature in the range of 300-800 °C. Glancing X-ray diffraction results show that for the reactions of Ni on Si1-xGex (x=0.1, 0.2), only Ni germanosilicide [Ni(Si1-yGey)] phase is observed when annealed at temperatures in the range of 300-800 °C. The N1 germanosilicide layers start to agglomerate at temperatures above 600 °C and become discontinuous at 800 °C, leading to hemi-spherical shaped germanosilicide grains. TEM and EDS results show that Ge outdiffuses rapidly from the Ni germanosilcide and is segregated at the germanosilcide/SiGe interface regions and the surface regions between the agglomerated germanosilcide grains.

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EP - 470

BT - Microscopy of Semiconducting Materials 2003

PB - CRC Press

ER -

Investigation of interfacial reaction of Ni on epitaxial Si_1-xGe_x (001)layers

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