Keyphrases
Indium Gallium Nitride (InGaN)
100%
Light-emitting Diodes
100%
Passivation Effect
100%
Micro-light-emitting Diodes (micro-LEDs)
100%
Sidewall Passivation
100%
Passivation Layer
71%
Layer Interface
42%
Sidewall
28%
Silicon Nitride
28%
Passivation
28%
SiO2-Al2O3
28%
X-ray Photoelectron Spectroscopy
14%
High Performance
14%
High Current Density
14%
Light Output
14%
Device Performance
14%
Chemical Bond
14%
Chemical State
14%
Nonradiative Recombination
14%
Lighting Applications
14%
Si3N4 Passivation
14%
Recombination Probability
14%
Solid-state Lighting
14%
Non-radial
14%
Radiative Defects
14%
SiO2 Passivation
14%
Passivation Materials
14%
Engineering
Side Wall
100%
Light-Emitting Diode
100%
Passivation
100%
Microscale
100%
Passivation Layer
55%
Layer Interface
33%
Silicon Dioxide
33%
Highlight
11%
High Current Density
11%
Light Output Power
11%
Ray Photoelectron Spectroscopy
11%
Device Performance
11%
State Lighting
11%
Radiative Recombination
11%
Material Science
Light-Emitting Diode
100%
Silicon Nitride
33%
Al2O3
22%
X-Ray Photoelectron Spectroscopy
11%
Density
11%
Chemical Bonding
11%
Chemical State
11%
Surface (Surface Science)
11%