Abstract
We investigated the spin-orbit torque (SOT) switching mechanism of a single layer of crystalline diluted ferromagnetic semiconductor by simulating the current scan hysteresis using the Landau-Lifshitz-Gilbert equation. Our study focuses on the switching of the out-of-plane magnetization component during current scans to provide a detailed understanding of the SOT switching process. The simulation results reveal that the SOT switching strongly depends on the relative strengths of the damping-like torque (DLT) and field-like torque (FLT). Through a systematic analysis, we found that the DLT to FLT ratio required for full SOT switching of the out-of-plane magnetized (GaMn) (AsP) film falls within the range of 0.5-1.0. We also identified a relationship between the DLT to FLT ratio and the linear behavior of the out-of-plane component of magnetization during current scans under a strong in-plane bias field. This suggests that the DLT to FLT ratio of a ferromagnetic film can be directly determined from current scan measurements under a large external field, providing crucial information for developing SOT-based devices.
Original language | English |
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Article number | 152401 |
Journal | Applied Physics Letters |
Volume | 123 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2023 Oct 9 |
Bibliographical note
Publisher Copyright:© 2023 Author(s).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)