Investigation of the charge collection efficiency of CdMnTe radiation detectors

R. Rafiei; D. Boardman; A. Sarbutt; D. A. Prokopovich; K. Kim; M. I. Reinhard; A. E. Bolotnikov; R. B. James

doi:10.1109/TNS.2012.2190941

Investigation of the charge collection efficiency of CdMnTe radiation detectors

R. Rafiei, D. Boardman, A. Sarbutt, D. A. Prokopovich, K. Kim, M. I. Reinhard, A. E. Bolotnikov, R. B. James

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

This paper presents the growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) crystals grown by the vertical Bridgman technique. The 10 × 10 × 1.9 mm ³ samples have been fabricated, and the charge collection properties of the CdMnTe detectors have been measured. Alpha-particle spectroscopy measurements have yielded an average charge collection efficiency approaching 100%. Ion beam induced charge (IBIC) measurements have been performed by raster scanning focused 5.5 MeV ⁴ He beams onto the detectors. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of Te inclusions within the detector bulk, and the reduction in charge collection efficiency in their locality has been quantified. It has been shown that the role of Te inclusions in degrading charge collection is reduced with increasing values of bias voltage. IBIC measurements for a range of low biases have highlighted the evolution of the charge collection uniformity across the detectors.

Original language	English
Article number	6182595
Pages (from-to)	634-641
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	59
Issue number	3 PART 2
DOIs	https://doi.org/10.1109/TNS.2012.2190941
Publication status	Published - 2012
Externally published	Yes

Bibliographical note

Funding Information:
Manuscript received December 04, 2011; revised January 31, 2012; accepted February 27, 2012. Date of publication April 11, 2012; date of current version June 12, 2012. This work was supported in part by the Cooperative Research Centre for Biomedical Imaging Development. This work was performed in part at the ACT node of the Australian National Fabrication Facility. A company established under the National Collaborative Research Infrastructure Strategy to provide nano and microfabrication facilities for Australia’s researchers.

Keywords

Alpha particle spectroscopy
CMT
CdMnTe
IBIC
Te inclusions
charge collection efficiency
crystal growth
detector fabrication
mobility-lifetime
semiconductor radiation detector

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2012.2190941

Cite this

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title = "Investigation of the charge collection efficiency of CdMnTe radiation detectors",

abstract = "This paper presents the growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) crystals grown by the vertical Bridgman technique. The 10 × 10 × 1.9 mm 3 samples have been fabricated, and the charge collection properties of the CdMnTe detectors have been measured. Alpha-particle spectroscopy measurements have yielded an average charge collection efficiency approaching 100%. Ion beam induced charge (IBIC) measurements have been performed by raster scanning focused 5.5 MeV 4 He beams onto the detectors. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of Te inclusions within the detector bulk, and the reduction in charge collection efficiency in their locality has been quantified. It has been shown that the role of Te inclusions in degrading charge collection is reduced with increasing values of bias voltage. IBIC measurements for a range of low biases have highlighted the evolution of the charge collection uniformity across the detectors.",

keywords = "Alpha particle spectroscopy, CMT, CdMnTe, IBIC, Te inclusions, charge collection efficiency, crystal growth, detector fabrication, mobility-lifetime, semiconductor radiation detector",

author = "R. Rafiei and D. Boardman and A. Sarbutt and Prokopovich, {D. A.} and K. Kim and Reinhard, {M. I.} and Bolotnikov, {A. E.} and James, {R. B.}",

note = "Funding Information: Manuscript received December 04, 2011; revised January 31, 2012; accepted February 27, 2012. Date of publication April 11, 2012; date of current version June 12, 2012. This work was supported in part by the Cooperative Research Centre for Biomedical Imaging Development. This work was performed in part at the ACT node of the Australian National Fabrication Facility. A company established under the National Collaborative Research Infrastructure Strategy to provide nano and microfabrication facilities for Australia{\textquoteright}s researchers.",

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AU - Rafiei, R.

AU - Boardman, D.

AU - Sarbutt, A.

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AU - Kim, K.

AU - Reinhard, M. I.

AU - Bolotnikov, A. E.

AU - James, R. B.

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PY - 2012

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N2 - This paper presents the growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) crystals grown by the vertical Bridgman technique. The 10 × 10 × 1.9 mm 3 samples have been fabricated, and the charge collection properties of the CdMnTe detectors have been measured. Alpha-particle spectroscopy measurements have yielded an average charge collection efficiency approaching 100%. Ion beam induced charge (IBIC) measurements have been performed by raster scanning focused 5.5 MeV 4 He beams onto the detectors. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of Te inclusions within the detector bulk, and the reduction in charge collection efficiency in their locality has been quantified. It has been shown that the role of Te inclusions in degrading charge collection is reduced with increasing values of bias voltage. IBIC measurements for a range of low biases have highlighted the evolution of the charge collection uniformity across the detectors.

AB - This paper presents the growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) crystals grown by the vertical Bridgman technique. The 10 × 10 × 1.9 mm 3 samples have been fabricated, and the charge collection properties of the CdMnTe detectors have been measured. Alpha-particle spectroscopy measurements have yielded an average charge collection efficiency approaching 100%. Ion beam induced charge (IBIC) measurements have been performed by raster scanning focused 5.5 MeV 4 He beams onto the detectors. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of Te inclusions within the detector bulk, and the reduction in charge collection efficiency in their locality has been quantified. It has been shown that the role of Te inclusions in degrading charge collection is reduced with increasing values of bias voltage. IBIC measurements for a range of low biases have highlighted the evolution of the charge collection uniformity across the detectors.

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KW - mobility-lifetime

KW - semiconductor radiation detector

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Investigation of the charge collection efficiency of CdMnTe radiation detectors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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