Investigation of the charge collection efficiency of CdMnTe radiation detectors

R. Rafiei, D. Boardman, A. Sarbutt, D. A. Prokopovich, K. Kim, M. I. Reinhard, A. E. Bolotnikov, R. B. James

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


This paper presents the growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) crystals grown by the vertical Bridgman technique. The 10 × 10 × 1.9 mm 3 samples have been fabricated, and the charge collection properties of the CdMnTe detectors have been measured. Alpha-particle spectroscopy measurements have yielded an average charge collection efficiency approaching 100%. Ion beam induced charge (IBIC) measurements have been performed by raster scanning focused 5.5 MeV 4 He beams onto the detectors. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of Te inclusions within the detector bulk, and the reduction in charge collection efficiency in their locality has been quantified. It has been shown that the role of Te inclusions in degrading charge collection is reduced with increasing values of bias voltage. IBIC measurements for a range of low biases have highlighted the evolution of the charge collection uniformity across the detectors.

Original languageEnglish
Article number6182595
Pages (from-to)634-641
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number3 PART 2
Publication statusPublished - 2012
Externally publishedYes


  • Alpha particle spectroscopy
  • CMT
  • CdMnTe
  • IBIC
  • Te inclusions
  • charge collection efficiency
  • crystal growth
  • detector fabrication
  • mobility-lifetime
  • semiconductor radiation detector

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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