Investigation of Zn diffusion by SIMS and its effects on the performance of AlGaInP-based red lasers

Young Chul Shin; Bum Jun Kim; Dong Hoon Kang; Young Min Kim; Tae Geun Kim

doi:10.1088/0268-1242/21/1/006

Investigation of Zn diffusion by SIMS and its effects on the performance of AlGaInP-based red lasers

Young Chul Shin, Bum Jun Kim, Dong Hoon Kang, Young Min Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The behaviour of Zn diffusion in a GaInP/(Al_0.5Ga _0.5)_0.5In_0.5P multiple quantum-well (MQW) layer was investigated as a function of the growth temperature and Zn/III ratio by secondary ion mass spectroscopy (SIMS). Then the diffusion length of Zn in the undoped (Al_0.7Ga_0.3)_0.5In_0.5P layer from the Zn-doped (Al_0.7Ga_0.3)_0.5In _0.5P (Zn: 1.0-1.2 × 10¹⁸ cm^-3) cladding layer was evaluated to design a barrier layer for Zn diffusion into the GaInP/(Al_0.5Ga_0.5)_0.5In_0.5P MQW active layer. As a result of incorporating a 130 nm thick diffusion barrier on top of the MQW layers of the AlGaInP red laser, the full width at half maximum (FWHM) of the photoluminescence (PL) spectrum for the GaInP/(Al _0.5Ga_0.5)_0.5In_0.5P MQW layers was reduced from 60 meV to 30 meV at room temperature (RT), and the threshold current was also greatly reduced from 110 mA to 75 mA for a standard AlGaInP-based ridge laser as compared to a AlGaInP laser without a diffusion barrier.

Original language	English
Pages (from-to)	35-39
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	21
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/21/1/006
Publication status	Published - 2006 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/21/1/006

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title = "Investigation of Zn diffusion by SIMS and its effects on the performance of AlGaInP-based red lasers",

abstract = "The behaviour of Zn diffusion in a GaInP/(Al0.5Ga 0.5)0.5In0.5P multiple quantum-well (MQW) layer was investigated as a function of the growth temperature and Zn/III ratio by secondary ion mass spectroscopy (SIMS). Then the diffusion length of Zn in the undoped (Al0.7Ga0.3)0.5In0.5P layer from the Zn-doped (Al0.7Ga0.3)0.5In 0.5P (Zn: 1.0-1.2 × 1018 cm-3) cladding layer was evaluated to design a barrier layer for Zn diffusion into the GaInP/(Al0.5Ga0.5)0.5In0.5P MQW active layer. As a result of incorporating a 130 nm thick diffusion barrier on top of the MQW layers of the AlGaInP red laser, the full width at half maximum (FWHM) of the photoluminescence (PL) spectrum for the GaInP/(Al 0.5Ga0.5)0.5In0.5P MQW layers was reduced from 60 meV to 30 meV at room temperature (RT), and the threshold current was also greatly reduced from 110 mA to 75 mA for a standard AlGaInP-based ridge laser as compared to a AlGaInP laser without a diffusion barrier.",

author = "Shin, {Young Chul} and Kim, {Bum Jun} and Kang, {Dong Hoon} and Kim, {Young Min} and Kim, {Tae Geun}",

year = "2006",

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doi = "10.1088/0268-1242/21/1/006",

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T1 - Investigation of Zn diffusion by SIMS and its effects on the performance of AlGaInP-based red lasers

AU - Shin, Young Chul

AU - Kim, Bum Jun

AU - Kang, Dong Hoon

AU - Kim, Young Min

AU - Kim, Tae Geun

PY - 2006/1/1

Y1 - 2006/1/1

N2 - The behaviour of Zn diffusion in a GaInP/(Al0.5Ga 0.5)0.5In0.5P multiple quantum-well (MQW) layer was investigated as a function of the growth temperature and Zn/III ratio by secondary ion mass spectroscopy (SIMS). Then the diffusion length of Zn in the undoped (Al0.7Ga0.3)0.5In0.5P layer from the Zn-doped (Al0.7Ga0.3)0.5In 0.5P (Zn: 1.0-1.2 × 1018 cm-3) cladding layer was evaluated to design a barrier layer for Zn diffusion into the GaInP/(Al0.5Ga0.5)0.5In0.5P MQW active layer. As a result of incorporating a 130 nm thick diffusion barrier on top of the MQW layers of the AlGaInP red laser, the full width at half maximum (FWHM) of the photoluminescence (PL) spectrum for the GaInP/(Al 0.5Ga0.5)0.5In0.5P MQW layers was reduced from 60 meV to 30 meV at room temperature (RT), and the threshold current was also greatly reduced from 110 mA to 75 mA for a standard AlGaInP-based ridge laser as compared to a AlGaInP laser without a diffusion barrier.

AB - The behaviour of Zn diffusion in a GaInP/(Al0.5Ga 0.5)0.5In0.5P multiple quantum-well (MQW) layer was investigated as a function of the growth temperature and Zn/III ratio by secondary ion mass spectroscopy (SIMS). Then the diffusion length of Zn in the undoped (Al0.7Ga0.3)0.5In0.5P layer from the Zn-doped (Al0.7Ga0.3)0.5In 0.5P (Zn: 1.0-1.2 × 1018 cm-3) cladding layer was evaluated to design a barrier layer for Zn diffusion into the GaInP/(Al0.5Ga0.5)0.5In0.5P MQW active layer. As a result of incorporating a 130 nm thick diffusion barrier on top of the MQW layers of the AlGaInP red laser, the full width at half maximum (FWHM) of the photoluminescence (PL) spectrum for the GaInP/(Al 0.5Ga0.5)0.5In0.5P MQW layers was reduced from 60 meV to 30 meV at room temperature (RT), and the threshold current was also greatly reduced from 110 mA to 75 mA for a standard AlGaInP-based ridge laser as compared to a AlGaInP laser without a diffusion barrier.

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Investigation of Zn diffusion by SIMS and its effects on the performance of AlGaInP-based red lasers

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