The variation in energy bandgaps of amorphous oxide semiconducting SiZnSnO (a-SZTO) has been investigated by controlling the oxygen partial pressure (Op). The systematic change in Op during deposition has been used to control the electrical characteristics and energy bandgap of a-SZTO. As Op increased, the electrical properties degraded, while the energy bandgap increased systematically. This is mainly due to the change in the oxygen vacancy inside the a-SZTO thin film by controlling Op. Changes in oxygen vacancies have been observed by using X-ray photoelectron spectroscopy (XPS) and investigated by analyzing the variation in density of states (DOS) inside the energy bandgaps. In addition, energy bandgap parameters, such as valence band level, Fermi level, and energy bandgap, were extracted by using ultraviolet photoelectron spectroscopy, Kelvin probe force microscopy, and high-resolution electron energy loss spectroscopy. As a result, it was confirmed that the difference between the conduction band minimum and the Fermi level in the energy bandgap increased systematically as Op increases. This shows good agreement with the measured results of XPS and DOS analyses.
Bibliographical noteFunding Information:
This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No.20172010104940). The Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1D1A3B06033837). We thank J-G. Chung for UPS and HR-EELS measurements and analysis.
© 2019, The Author(s).
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