Investigation on the electric properties of Bi1.5 ZnNb1.5O7 thin films grown on TiN substrate for MIM capacitors

Kyoung Pyo Hong; Kyung Hoon Cho; Young Hun Jeong; Sahm Nahm; Chong Yun Kang; Seok Jin Yoon

doi:10.1109/LED.2008.918271

Investigation on the electric properties of Bi_1.5 ZnNb_1.5O₇ thin films grown on TiN substrate for MIM capacitors

Kyoung Pyo Hong, Kyung Hoon Cho, Young Hun Jeong, Sahm Nahm, Chong Yun Kang, Seok Jin Yoon

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A small crystalline phase was formed in the Bi_1.5 ZnNb_1.5O₇ (BZN) film grown at 300 °C TiN/ SiO₂/Si substrate using RF-magnetron sputtering. A 46-nm-thick BZN film exhibited a high capacitance density of 13.6 fF/ μ² at 100 kHz with a dielectric constant of 71, which did not change even in the gigahertz range (1-6 GHz). The quality factor was high, approximately 50, at 2.5 GHz. The leakage-current density was low, approximately 5.66 nA/cm², at 2 V. The quadratic voltage and temperature coefficients of capacitance were approximately 631 ppm/V² and 149 ppm/°C at 100 kHz, respectively. These results indicate that the BZN film grown on TiN substrate at 300 °C can be a good candidate material for metal-insulator-metal capacitors.

Original language	English
Pages (from-to)	334-337
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	4
DOIs	https://doi.org/10.1109/LED.2008.918271
Publication status	Published - 2008 Apr

Keywords

BiZnNbO
High-k
Metal-insulator-metal (MIM) capacitor
Temperature coefficient of capacitance (TCC)
Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2008.918271

Cite this

@article{e60c5892d44449d1895b19f2da59085b,

title = "Investigation on the electric properties of Bi1.5 ZnNb1.5O7 thin films grown on TiN substrate for MIM capacitors",

abstract = "A small crystalline phase was formed in the Bi1.5 ZnNb1.5O7 (BZN) film grown at 300 °C TiN/ SiO2/Si substrate using RF-magnetron sputtering. A 46-nm-thick BZN film exhibited a high capacitance density of 13.6 fF/ μ2 at 100 kHz with a dielectric constant of 71, which did not change even in the gigahertz range (1-6 GHz). The quality factor was high, approximately 50, at 2.5 GHz. The leakage-current density was low, approximately 5.66 nA/cm2, at 2 V. The quadratic voltage and temperature coefficients of capacitance were approximately 631 ppm/V2 and 149 ppm/°C at 100 kHz, respectively. These results indicate that the BZN film grown on TiN substrate at 300 °C can be a good candidate material for metal-insulator-metal capacitors.",

keywords = "BiZnNbO, High-k, Metal-insulator-metal (MIM) capacitor, Temperature coefficient of capacitance (TCC), Voltage coefficient of capacitance (VCC)",

author = "Hong, {Kyoung Pyo} and Cho, {Kyung Hoon} and Jeong, {Young Hun} and Sahm Nahm and Kang, {Chong Yun} and Yoon, {Seok Jin}",

note = "Funding Information: Manuscript received December 14, 2007. This work was supported by the Ministry of Science and Technology through Nano-Technology project. The review of this letter was arranged by Editor A. Wang. K. P. Hong, K.-H. Cho, Y. H. Jeong, and S. Nahm are with the Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: snahm@korea.ac.kr). C.-Y. Kang and S.-J. Yoon are with the Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2008.918271",

year = "2008",

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T1 - Investigation on the electric properties of Bi1.5 ZnNb1.5O7 thin films grown on TiN substrate for MIM capacitors

AU - Hong, Kyoung Pyo

AU - Cho, Kyung Hoon

AU - Jeong, Young Hun

AU - Nahm, Sahm

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

N1 - Funding Information: Manuscript received December 14, 2007. This work was supported by the Ministry of Science and Technology through Nano-Technology project. The review of this letter was arranged by Editor A. Wang. K. P. Hong, K.-H. Cho, Y. H. Jeong, and S. Nahm are with the Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: snahm@korea.ac.kr). C.-Y. Kang and S.-J. Yoon are with the Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2008.918271

PY - 2008/4

Y1 - 2008/4

N2 - A small crystalline phase was formed in the Bi1.5 ZnNb1.5O7 (BZN) film grown at 300 °C TiN/ SiO2/Si substrate using RF-magnetron sputtering. A 46-nm-thick BZN film exhibited a high capacitance density of 13.6 fF/ μ2 at 100 kHz with a dielectric constant of 71, which did not change even in the gigahertz range (1-6 GHz). The quality factor was high, approximately 50, at 2.5 GHz. The leakage-current density was low, approximately 5.66 nA/cm2, at 2 V. The quadratic voltage and temperature coefficients of capacitance were approximately 631 ppm/V2 and 149 ppm/°C at 100 kHz, respectively. These results indicate that the BZN film grown on TiN substrate at 300 °C can be a good candidate material for metal-insulator-metal capacitors.

AB - A small crystalline phase was formed in the Bi1.5 ZnNb1.5O7 (BZN) film grown at 300 °C TiN/ SiO2/Si substrate using RF-magnetron sputtering. A 46-nm-thick BZN film exhibited a high capacitance density of 13.6 fF/ μ2 at 100 kHz with a dielectric constant of 71, which did not change even in the gigahertz range (1-6 GHz). The quality factor was high, approximately 50, at 2.5 GHz. The leakage-current density was low, approximately 5.66 nA/cm2, at 2 V. The quadratic voltage and temperature coefficients of capacitance were approximately 631 ppm/V2 and 149 ppm/°C at 100 kHz, respectively. These results indicate that the BZN film grown on TiN substrate at 300 °C can be a good candidate material for metal-insulator-metal capacitors.

KW - BiZnNbO

KW - High-k

KW - Metal-insulator-metal (MIM) capacitor

KW - Temperature coefficient of capacitance (TCC)

KW - Voltage coefficient of capacitance (VCC)

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