Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials

Jihoon Choi; Hyun Seok Lee; Taek Sung Lee; Suyoun Lee; Won Mok Kim; Donghwan Kim; Byung Ki Cheong

doi:10.1063/1.3211871

Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials

Jihoon Choi, Hyun Seok Lee, Taek Sung Lee, Suyoun Lee, Won Mok Kim, Donghwan Kim, Byung Ki Cheong

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

To better understand the role of nitrogen (N) during crystallization of Sb-rich phase change materials, a study was conducted using Sb and Sb70 Te30 as host materials of N. Crystallization of the as-sputtered Sb-N films of varying N content was examined to reveal that Sb-N bonds are formed in the as-sputtered states, enhancing amorphous phase stability increasingly with N content. Crystallization appeared to proceed with irreversible dissociation of these bonds to form N₂ molecules that may then exist stably during the subsequent memory operations. N₂ molecules are considered to play as growth-retarding agents as demonstrated with memory operations of N-doped Sb70 Te30.

Original language	English
Article number	081905
Journal	Applied Physics Letters
Volume	95
Issue number	8
DOIs	https://doi.org/10.1063/1.3211871
Publication status	Published - 2009

Bibliographical note

Funding Information:
The authors would like to acknowledge a research grant by Korean Ministry of Knowledge Economy (MKE) through 0.1 terabit nonvolatile memory (NVM) device program.

Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Cite this

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abstract = "To better understand the role of nitrogen (N) during crystallization of Sb-rich phase change materials, a study was conducted using Sb and Sb70 Te30 as host materials of N. Crystallization of the as-sputtered Sb-N films of varying N content was examined to reveal that Sb-N bonds are formed in the as-sputtered states, enhancing amorphous phase stability increasingly with N content. Crystallization appeared to proceed with irreversible dissociation of these bonds to form N2 molecules that may then exist stably during the subsequent memory operations. N2 molecules are considered to play as growth-retarding agents as demonstrated with memory operations of N-doped Sb70 Te30.",

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AU - Choi, Jihoon

AU - Lee, Hyun Seok

AU - Lee, Taek Sung

AU - Lee, Suyoun

AU - Kim, Won Mok

AU - Kim, Donghwan

AU - Cheong, Byung Ki

N1 - Funding Information: The authors would like to acknowledge a research grant by Korean Ministry of Knowledge Economy (MKE) through 0.1 terabit nonvolatile memory (NVM) device program. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

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Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials

Abstract

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