Abstract
The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an Ion/off ratio of 44×106.
Original language | English |
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Pages (from-to) | 7089-7091 |
Number of pages | 3 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 13 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2013 Oct |
Keywords
- Oxide Thin Film Transistors
- SiZnSnO
- Solution Process
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics