Investigation on the temperature dependence of the performance of solution processed si-zn-sn oxide thin film transistor

Jun Young Choi; Sang Sig Kim; Sang Yeol Lee

doi:10.1166/jnn.2013.7632

Investigation on the temperature dependence of the performance of solution processed si-zn-sn oxide thin film transistor

Jun Young Choi, Sang Sig Kim, Sang Yeol Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an Ion/off ratio of 44×106.

Original language	English
Pages (from-to)	7089-7091
Number of pages	3
Journal	Journal of Nanoscience and Nanotechnology
Volume	13
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2013.7632
Publication status	Published - 2013 Oct

Keywords

Oxide Thin Film Transistors
SiZnSnO
Solution Process

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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10.1166/jnn.2013.7632

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abstract = "The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an Ion/off ratio of 44×106.",

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AB - The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an Ion/off ratio of 44×106.

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JF - Journal of Nanoscience and Nanotechnology

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Investigation on the temperature dependence of the performance of solution processed si-zn-sn oxide thin film transistor

Abstract

Keywords

ASJC Scopus subject areas

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