Investigation on the temperature dependence of the performance of solution processed si-zn-sn oxide thin film transistor

Jun Young Choi, Sang Sig Kim, Sang Yeol Lee

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)

    Abstract

    The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an Ion/off ratio of 44×106.

    Original languageEnglish
    Pages (from-to)7089-7091
    Number of pages3
    JournalJournal of Nanoscience and Nanotechnology
    Volume13
    Issue number10
    DOIs
    Publication statusPublished - 2013 Oct

    Keywords

    • Oxide Thin Film Transistors
    • SiZnSnO
    • Solution Process

    ASJC Scopus subject areas

    • Bioengineering
    • General Chemistry
    • Biomedical Engineering
    • General Materials Science
    • Condensed Matter Physics

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